Magnetic Memory Cell Structure for Etch-Safe MR Element Patterning

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Solution Overview

Problem

Existing magnetic memory devices face challenges in forming patterns of magnetoresistance effect elements due to the adherence of magnetic elements to selector portions during etching, which can affect the reliability and characteristics of the memory cells.

Innovation Solution

Incorporating a buffer insulating portion between the magnetoresistance effect element and the selector portion, surrounded by a conductive portion that electrically connects them, to prevent metal element adherence and ensure reliable electrical connection, while using ion beam etching and protective sidewall insulating layers to maintain the integrity of both components during the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If ion beam etching is used to form patterns of magnetoresistance effect elements, then manufacturing precision is improved, but magnetic elements adhere to selector portions causing reliability degradation

Engineering Contradiction:

Improvepattern formation precisionVSAvoiddevice reliability

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

A buffer insulating portion is introduced as an intermediary layer between the magnetoresistance effect element and the selector portion. This buffer layer prevents direct contact and adhesion between magnetic elements and the selector during ion beam etching, while still allowing electrical connection through the conductive portion that surrounds it.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The structure is segmented by introducing the buffer insulating portion that spatially separates the magnetoresistance effect element from the selector portion. This segmentation allows independent optimization of each component while preventing harmful interactions during manufacturing.

Inventive Principle:

Principle #1Segmentation

2Reliability

If a buffer insulating portion is added between magnetoresistance effect element and selector portion, then reliability is improved by preventing adhesion, but device complexity increases

Engineering Contradiction:

Improvedevice reliabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The buffer insulating portion serves multiple functions simultaneously: it prevents magnetic element adhesion to the selector, provides electrical insulation, and maintains structural integrity. The conductive portion surrounding it provides both mechanical support and electrical connection, reducing the need for separate components.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Reliability

If conductive portion surrounds the buffer insulating portion, then electrical connection reliability is improved, but manufacturing precision requirements increase

Engineering Contradiction:

Improveelectrical connection reliabilityVSAvoidalignment precision

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The conductive portion is configured to surround the buffer insulating portion in a three-dimensional arrangement rather than a simple planar connection. This spatial configuration provides multiple contact points and redundancy, ensuring reliable electrical connection even with variations in alignment during manufacturing.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the reliability and characteristics of magnetic memory devices by preventing metal element adherence and ensuring effective electrical connection between the magnetoresistance effect and selector portions, resulting in improved manufacturing precision and device performance.

Implementation Method 1

a conductive portion surrounding a side surface of the buffer insulating portion and electrically connecting the magnetoresistance effect element portion and the switching element portion to each other

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

Methodology Applied

Scientific EffectPhysical barrier protection: Physical Containment

Data Source

PatentUS20230301195A1Magnetic memory device

Publication Date: 2023.09.21 KIOXIA CORP

AI summary

According to one embodiment, a magnetic memory device includes a magnetoresistance effect element portion, a switching element portion provided on a lower layer side of the magnetoresistance effect element portion, a buffer insulating portion provided between the magnetoresistance effect element portion and the switching element portion, and a conductive portion surrounding a side surface of the buffer insulating portion and electrically connecting the magnetoresistance effect element portion and the switching element portion to each other.