Magnetic Memory Device Localized Metal Layer Thickness

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Solution Overview

Problem

Current magnetic memory devices face challenges in increasing bit density due to limitations in reducing program current and maintaining spin coherence, which affects the efficiency and density of data storage.

Innovation Solution

The magnetic memory device incorporates a metal-containing layer with specific portions and intermediate layers, including non-overlap regions with thinner thicknesses, and a controller that supplies program currents in different directions to alter magnetic resistances, optimizing spin torque transfer and reducing program current.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the thickness of the metal-containing layer is reduced uniformly to increase bit density, then the storage capacity increases, but spin coherence deteriorates and program current efficiency decreases

Engineering Contradiction:

Improvebit densityVSAvoidspin coherence

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

The patent applies local quality by creating non-uniform thickness distribution in the metal-containing layer, with thinner regions (first and second non-overlap regions) at specific locations and thicker regions (third portion) elsewhere. This localized thickness variation allows the layer to provide different functions in different areas: thinner regions reduce overall program current while thicker regions maintain spin coherence where needed, resolving the contradiction between bit density and spin coherence.

Inventive Principle:

Principle #3Local quality

2Use of energy by moving object

If the program current is reduced to improve energy efficiency, then energy consumption decreases, but the ability to maintain magnetic resistance states deteriorates

Engineering Contradiction:

Improveprogram currentVSAvoidmagnetic resistance state

Core Design Contradiction:

Use of energy by moving objectVSReliability

Solution Approach 1:

The patent uses local quality by creating regions of different thicknesses in the metal-containing layer. The thinner first and second non-overlap regions reduce the overall program current required, while the thicker third portion maintains sufficient spin torque transfer to reliably switch magnetic resistance states. This localized variation allows the system to operate at lower currents while maintaining switching reliability.

Inventive Principle:

Principle #3Local quality

3Power

If the metal-containing layer thickness is increased to improve spin torque transfer, then program efficiency improves, but device volume increases and bit density decreases

Engineering Contradiction:

Improvespin torque transfer efficiencyVSAvoiddevice volume

Core Design Contradiction:

PowerVSVolume of moving object

Solution Approach 1:

The patent applies local quality by creating a non-uniform thickness profile in the metal-containing layer. The thicker third portion provides sufficient spin torque transfer efficiency in critical regions, while the thinner first and second non-overlap regions reduce overall device volume. This localized thickness optimization allows the device to achieve high spin torque efficiency without proportionally increasing overall volume, thereby maintaining high bit density.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances spin coherence, reduces program current, and increases bit density by improving the efficiency of programming and data storage capacity.

Implementation Method 1

optimizing spin torque transfer and reducing program current

Methodology Applied

Scientific EffectSpin torque transfer:

Implementation Method 2

enhances spin coherence

Methodology Applied

Scientific EffectSpin coherence:

Implementation Method 3

alter magnetic resistances

Methodology Applied

Scientific EffectMagnetoresistance: Magnetoresistance

Data Source

PatentUS10510949B2Magnetic memory device and method for manufacturing the same

Publication Date: 2019.12.17 KK TOSHIBA

AI summary

According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.