3D NAND ISPP Step-Voltage Control for Faster High-State Programming
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Solution Overview
Problem
Existing memory devices face inefficiencies in programming operations, particularly in incremental step pulse programming (ISPP), which can be slow and impact read-window margins, especially for high states like P7, affecting both programming speed and reliability.
Innovation Solution
Implementing a variable step pulse approach in ISPP, where the step pulse is adjusted based on programming conditions, such as reaching a target state or a predetermined number of pulses, to optimize programming speed without compromising accuracy and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a small step pulse is used in ISPP programming, then the accuracy and reliability of programming is improved, but the programming speed deteriorates
Solution Approach 1:
The patent applies dynamics by transitioning from a fixed step pulse to a variable step pulse that changes based on programming state. The step pulse is increased when certain conditions are met (e.g., after successful programming of lower states, or after a predetermined number of pulses), allowing the system to adapt the pulse size dynamically. This resolves the contradiction by using small pulses initially for accuracy, then switching to larger pulses for speed when accuracy is already established.
Solution Approach 2:
The patent changes the parameter of step pulse size based on programming conditions. By monitoring programming state and adjusting the step pulse parameter accordingly, the system can optimize both accuracy and speed. The parameter change is triggered by conditions such as reaching target states or completing predetermined pulse counts, allowing the system to balance between programming accuracy and speed throughout the process.
2Reliability
If multiple rounds of programming are performed to reach high programming voltage, then the programming completeness is improved, but the programming time deteriorates
Solution Approach 1:
The system dynamically adjusts the step pulse size based on the current programming state and voltage level. When programming lower states, small step pulses ensure completeness and accuracy. When transitioning to higher states or after predetermined pulses, the step pulse increases to reduce the number of remaining rounds, thereby decreasing total programming time while maintaining completeness through state-dependent verification.
Solution Approach 2:
The patent implements feedback mechanisms where the programming controller monitors programming state, voltage levels, and pulse counts. Based on this feedback, the controller determines when to increase step pulses or adjust programming parameters. This feedback loop ensures programming completeness is maintained while optimizing time by avoiding unnecessary additional rounds when the target state is already reached or verified.
3Productivity
If the step pulse is increased to improve programming speed, then the programming time is reduced, but the read-window margin deteriorates
Solution Approach 1:
The system dynamically adjusts step pulse size based on programming state and read-window margin requirements. When programming lower states where read-window margin is critical, small step pulses are used to maintain narrow threshold voltage distributions. When programming higher states like P7 where the read-window margin is less critical or already established, larger step pulses are applied to maximize programming speed, thus resolving the contradiction between speed and margin preservation.
Solution Approach 2:
The patent applies local quality by treating different programming states differently in terms of step pulse size. Each state (P1-P7) has different requirements for read-window margin and programming speed. The system optimizes the step pulse locally for each state, using smaller pulses for states requiring high precision and larger pulses for states where speed is prioritized, thereby achieving overall optimization without compromising critical read-window margins.
Data Source
AI summary
Disclosed herein are an exemplary memory device and methods for programing the memory device. In an aspect, a memory device comprises a memory configured to store a program code and a processor. The processor can be configured to perform a first programming to a memory cell of the memory device with a first step voltage value. The processor is further configured to determine that a step voltage increase condition is met. The processor can also be configured to perform a second programming to the memory cell of the memory device with the second step voltage value. The second step voltage value is greater than the first step voltage value by an incremental voltage value.


