See how a spring-biased drip stop valve with torus-shaped actuator prevents leakage while allow
See how a mechanical coupling with torus actuator and locating features enables centralized cof
Odd-state cells encode three data pages across two flash blocks, simplifying verification and limiting single-cell failures to one-bit errors.
Ferroelectric or anti-ferroelectric nanocrystals in a vertical NAND charge trap layer reduce cell-to-cell charge transfer and lower program/erase voltages.
Oxidation-blocking dielectric spacers shield floating gates during trench liner growth, preserving tunneling oxide uniformity and gate shape.
A regulator varies charge pump input voltage by boost stage count, cutting excess voltage drop and improving output and current efficiency.
Bonding a vertical memory stack to separate control logic preserves logic performance while enabling denser microelectronic fabrication.
A trench buffer layer and hard stop protect stacked NAND memory cell pillars from shaving during etching, improving structural integrity and reliability.
A double switch CTS with LV triple-well NMOS cuts charge pump footprint and power while preserving 3x output accuracy and design-rule compliance.
A series select transistor keeps the FeFET in accumulation during readout, preventing depolarization loss and extending retention at low power.