Aligned Conductive Contacts for Collapse-Resistant Memory Arrays
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Solution Overview
Problem
Structural damage, such as collapse, occurs during the fabrication of memory devices with small dimensions, affecting yield, cost, and reliability.
Innovation Solution
The implementation of conductive contacts aligned with support structures, specifically dielectric structures, to provide structural support and prevent damage to control gates in memory devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If memory device dimensions are reduced to nanometer size, then device density and integration are improved, but structural damage and collapse occur during fabrication
Solution Approach 1:
The patent applies preliminary action by forming support structures (dielectric pillars) before forming the control gates. These support structures are prepared in advance to prevent collapse during subsequent fabrication steps. The support structures are formed at specific locations where control gates will be placed, providing preemptive structural reinforcement before the vulnerable control gate formation occurs.
Solution Approach 2:
The patent uses dielectric support structures as intermediary elements between the substrate and the control gates. These intermediary structures provide mechanical support to the control gates during fabrication, preventing direct contact and potential collapse. The support structures act as a mediating framework that maintains spatial separation and structural integrity throughout the fabrication process.
2Reliability
If support structures are added to prevent collapse, then structural reliability is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by placing support structures only at specific locations where control gates will be formed, rather than uniformly across the entire device. This localized approach provides structural support exactly where needed while minimizing the overall addition of complex structures. The support structures are positioned at predetermined locations corresponding to future control gate positions.
Solution Approach 2:
The patent segments the device structure by dividing it into regions with and without support structures. This segmentation allows the complex support structure system to be broken down into discrete, manageable units (individual dielectric pillars at specific locations) rather than a continuous complex framework, making fabrication more tractable.
Data Source
AI summary
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory device, which includes: levels of conductive materials interleaved with levels of dielectric materials; memory cell strings including respective pillars extending through the levels of conductive materials and the levels of dielectric materials; a dielectric structure including a length extending through the levels of conductive materials and the levels of dielectric materials; and a conductive contact contacting one of the levels of conductive materials. The conductive contact includes a first portion and a second portion, and the dielectric structure includes a portion between the first portion of the conductive contact and the second portion of the conductive contact.