Memory Program Verify Level Control During Suspend-Resume

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Solution Overview

Problem

The reliability of memory devices deteriorates due to changes in threshold voltages of memory cells caused by suspend and resume operations during program operations, which are influenced by the number of suspend operations and the duration of suspend and resume commands.

Innovation Solution

A memory device with a control circuit that adjusts verify levels based on the number of suspend operations and the duration of suspend and resume commands to mitigate these changes, using methods that include changing verify levels depending on suspend count, time intervals, and cycling count.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If suspend and resume operations are performed during program operations, then operational flexibility is improved, but threshold voltage changes occur causing reliability deterioration

Engineering Contradiction:

Improveoperational flexibilityVSAvoidmemory device reliability

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent changes the verify level parameter based on the number of suspend operations performed. The control circuit adjusts the verify level to a higher level when suspend count exceeds a reference value, compensating for threshold voltage changes caused by suspend-resume operations and maintaining reliable program verification

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The control circuit monitors the suspend operation count and uses this feedback information to dynamically adjust the verify level. This closed-loop control ensures that the verify level adapts to the actual state of memory cells after suspend-resume operations, preventing reliability degradation

Inventive Principle:

Principle #23Feedback

2Manufacturing precision

If verify levels are adjusted based on suspend count, then program operation accuracy is improved, but device complexity increases

Engineering Contradiction:

Improveprogram operation accuracyVSAvoidcontrol circuit complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The control circuit pre-establishes multiple verify levels corresponding to different suspend operation counts. When a suspend operation occurs, the circuit selectively applies the appropriate pre-configured verify level based on the current suspend count, avoiding the need for complex real-time calculations

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The verify level is made dynamic rather than fixed, allowing it to change based on the suspend operation count. This dynamic adjustment is implemented through simple conditional logic in the control circuit that selects from pre-defined verify level values, balancing adaptability with circuit simplicity

Inventive Principle:

Principle #15Dynamics

Data Source

PatentUS20250384938A1Memory device and method of operating the memory device

Publication Date: 2025.12.18 SK HYNIX INC

AI summary

Provided herein is a memory device and a method of operating the memory device. The memory device including a memory block connected to bit lines and a source line, a peripheral circuit configured to perform a program operation on the memory block, and a control circuit configured to control the peripheral circuit to perform the program operation on the memory block in response to a program command, control the peripheral circuit to suspend the program operation and perform a suspend operation in response to a suspend command, and control the peripheral circuit to resume the suspended program operation in response to a resume command, wherein the control circuit is configured to change verify levels corresponding to program states based on the suspend operation.