NAND Memory Multi-Plane Read Architecture for Asynchronous Access

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Solution Overview

Problem

Existing NAND Flash memory devices perform multi-plane read operations synchronously, limiting system performance as the host cannot issue read instructions when the memory device is busy, restricting operation speed and flexibility.

Innovation Solution

Implementing an asynchronous multi-plane independent read operation architecture with a main microcontroller unit (MCU) and multiple asynchronous multi-plane independent (AMPI) read units, along with a multiplexing circuit to manage control signals, allowing read instructions to be issued even when the memory device is busy, thereby enhancing system performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If synchronous multi-plane read operation is used, then control is simplified, but system performance is limited and operation speed is reduced

Engineering Contradiction:
Improvecontrol complexityVSAvoidsystem performance
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent divides the control function into multiple independent read units (first read unit, second read unit, third read unit, etc.), each capable of independently controlling read operations on different memory planes. This segmentation allows parallel read operations across multiple planes simultaneously, improving system performance while maintaining manageable control complexity through modular design.

Inventive Principle:
Principle #1Segmentation

2Device complexity

If synchronous multi-plane read operation is used, then operation coordination is simplified, but operation flexibility is restricted

Engineering Contradiction:
Improveoperation coordinationVSAvoidoperation flexibility
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The patent implements dynamic control where each read unit can independently initiate and manage read operations on its assigned memory plane without waiting for other planes to complete. This dynamic operation mode allows the system to adapt to different read requirements and issue read instructions flexibly, even when the memory device is busy with other operations, thereby improving operation flexibility.

Inventive Principle:
Principle #15Dynamics

3Speed

If multiple independent read units are implemented, then read operation speed is improved, but device complexity increases

Engineering Contradiction:
Improveread operation speedVSAvoidnumber of control units
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent segments the read control function into multiple dedicated read units, where each unit is responsible for controlling read operations on specific memory planes. This segmentation enables parallel read operations that improve speed while keeping each control unit relatively simple in structure, thus balancing speed improvement with acceptable device complexity.

Inventive Principle:
Principle #1Segmentation

4Adaptability or versatility

If asynchronous multi-plane independent read operation is implemented, then operation flexibility is improved, but control signal management becomes more complex

Engineering Contradiction:
Improveoperation flexibilityVSAvoidcontrol signal management
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent introduces a multiplexing circuit as an intermediary component that manages control signals between the multiple read units and the memory planes. The multiplexing circuit receives control signals from different read units and routes them to the appropriate memory planes, simplifying signal management while enabling flexible asynchronous read operations across multiple planes simultaneously.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20240371446A1Memory device and asynchronous multi-plane independent read operation thereof
Publication Date: 2024.11.07 YANGTZE MEMORY TECH CO LTD
  • US20240371446A1 patent drawing
  • US20240371446A1 patent drawing
  • US20240371446A1 patent drawing

AI summary

In certain aspects, a memory device includes N memory planes, where N is an integer greater than 1, M asynchronous multi-plane independent (AMPI) read units, each coupled to one of the N memory planes, where M is an integer smaller than or equal to N, a first microcontroller unit (MCU) coupled to each memory plane of the N memory planes, and a multiplexing circuit coupled to the N memory planes, the first MCU, and the M AMPI read units.