Non-Volatile Memory Read Recovery Using Cell-Specific Voltage Offsets

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Solution Overview

Problem

Non-volatile memories face errors in data read due to cell-dependent systematic noise, which page-wide techniques cannot effectively address since the read reference voltage is the same for all cells in a page.

Innovation Solution

A method is introduced where a quantized estimate of the offset in the read reference voltage is made for each cell to correct for systematic noise, adjusting the reference voltage for each cell and processing the combined results through error correction again.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If page-wide techniques are used to handle systematic noise, then the read reference voltage is uniformly applied to all cells in a page, but cell-dependent systematic noise cannot be effectively corrected since the same reference voltage is used for all cells

Engineering Contradiction:
Improvedata read accuracyVSAvoidnoise correction complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the page-wide noise correction problem into cell-level corrections by dividing cells into multiple groups based on their physical locations. Each group receives a tailored read reference voltage adjustment based on its specific systematic noise characteristics, thereby resolving the contradiction between uniform treatment and cell-dependent correction needs.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by assigning different read reference voltage offsets to different cell groups based on their specific physical locations and noise characteristics. Instead of uniform page-wide correction, each local region receives customized correction parameters, enabling effective cell-dependent systematic noise correction while maintaining manageable complexity through group-based organization.

Inventive Principle:
Principle #3Local quality

2Reliability

If quantized estimate of offset is made for each cell and read reference voltage is adjusted accordingly, then cell-dependent systematic noise is corrected, but the processing complexity and time increase

Engineering Contradiction:
Improveerror correction capabilityVSAvoidprocessing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent reduces processing time by segmenting cells into groups based on physical location and applying group-level offset estimates rather than individual cell-level estimates. This segmentation approach maintains effective noise correction while significantly reducing the computational burden and processing time associated with evaluating each cell separately.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies partial action by estimating offset values for representative cells within each group rather than all cells, then applying these estimates to entire groups. This partial estimation approach achieves sufficient correction accuracy while reducing processing time and computational resources compared to full cell-level analysis.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS20110016372A1Prediction and cancellation of systematic noise sources in non-volatile memory
Publication Date: 2011.01.20 SK HYNIX NAND PRODUCT SOLUTIONS CORP
  • US20110016372A1 patent drawing
  • US20110016372A1 patent drawing
  • US20110016372A1 patent drawing

AI summary

Various embodiments of the invention pertain to a technique of recovering data from a portion of a non-volatile memory which was not reliably read because the number of read errors exceeded the ability of the ECC process to correct those errors. For each cell in that portion of memory, a quantized estimate is made of the amount of offset in the read reference voltage that is predicted to correct for any systematic noise that may have affected the reading of that cell. For each quantized offset, the read reference voltage is adjusted by that amount and data from the relevant cells is read. The combined results for all the cells are then processed through the ECC again.