LV TWL NMOS Charge Pump With Double Switch CTS Layout
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Solution Overview
Problem
Conventional charge pumps in non-volatile memory systems face inefficiencies due to large circuit footprints and high power consumption, particularly when generating multiple regulated outputs, and violate electrical design rules when using high voltage capacitors.
Innovation Solution
The proposed charge pump design employs a double switch charge transfer switch using low voltage triple well N-type field effect transistors (LV TWL NMOS) to improve the LV capacitor to HV capacitor ratio, reducing the circuit footprint and avoiding electrical design rule violations while maintaining output accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional charge pumps use high voltage capacitors to generate multiple regulated outputs, then the output voltage capability is improved, but the circuit footprint increases and electrical design rules are violated
Solution Approach 1:
The patent changes the voltage parameters by using voltage conversion circuits to generate multiple regulated outputs from a single high voltage output. Instead of using multiple high voltage capacitors with different voltage ratings, the system converts the high voltage to multiple lower regulated voltages, reducing the circuit footprint while maintaining output capability
Solution Approach 2:
The patent introduces voltage conversion circuits as intermediary components between the high voltage charge pump output and the final regulated outputs. These conversion circuits act as mediators that transform the high voltage into multiple regulated voltage levels, avoiding the need for multiple high voltage capacitors
2Power
If conventional charge pumps use multiple high voltage capacitors to provide concurrent regulated outputs, then the power delivery capability is improved, but the power consumption increases
Solution Approach 1:
The patent makes the single high voltage charge pump output serve multiple functions by using voltage conversion circuits to generate multiple regulated outputs from one source. This multi-functional approach allows the system to deliver power to multiple loads while consuming less energy than would be required by multiple separate charge pump circuits
3Power
If conventional charge pumps use high voltage capacitors for voltage multiplication, then the output voltage level is improved, but electrical design rules are violated
Solution Approach 1:
The patent changes the voltage parameters through conversion circuits that transform the high voltage output into multiple lower regulated voltage levels. This parameter transformation ensures that the final output voltages comply with electrical design rules while still achieving the required voltage multiplication function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves a 17% reduction in charge pump circuit footprint and lowers power consumption without compromising output voltage accuracy, enhancing the efficiency of non-volatile memory systems.
Implementation Method 1
a double switch charge transfer switch using low voltage triple well N-type field effect transistors (LV TWL NMOS) to improve the LV capacitor to HV capacitor ratio
Data Source
AI summary
The application generally discloses systems and methods of generating a voltage waveform having an amplitude three times an input voltage amplitude using a plurality of low voltage (LV) triple well (TWL) N-type field effect devices. The method includes: receiving a first input voltage at a first input of a double switch charge transfer switch (CTS) circuit; applying a 2× kick voltage to a first capacitor coupled to a first portion of the double switch CTS circuit, the first capacitor configured to discharge a kick voltage to a source of a first LV TWL N-type field effect device; and applying a 1× kick voltage to a second capacitor coupled a second portion of the double switch CTS circuit, the second capacitor configured to discharge a kick voltage to a source of a second LV TWL N-type field effect device.


