Conductive Contact Tier Structure for 3D Memory Collapse Prevention
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Solution Overview
Problem
Structural damage during fabrication of memory devices, particularly at small dimensions, leads to yield, cost, and reliability issues.
Innovation Solution
The implementation of treated tiers in memory devices, including conductive contacts, enhances structural support near these contacts, improving the integrity and reliability of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If memory device dimensions are reduced to nanometer size, then device integration and density are improved, but structural damage and collapse during fabrication occur
Solution Approach 1:
The patent applies local quality by treating specific tiers (certain levels or layers) of the memory device structure with enhanced structural support materials or processes. This localized treatment provides additional mechanical reinforcement precisely where needed during fabrication, preventing collapse in critical regions while maintaining the overall reduced dimensions and high density of the device.
2Ease of manufacture
If conventional fabrication processes are used without treated tiers, then manufacturing simplicity is maintained, but structural collapse occurs reducing yield
Solution Approach 1:
The patent implements preliminary action by incorporating treated tiers with enhanced structural properties into the fabrication process beforehand. These pre-treated layers provide proactive structural support during subsequent manufacturing steps, preventing collapse before it occurs. This approach maintains relative manufacturing simplicity while significantly improving yield by addressing structural weaknesses in advance rather than reacting to failures.
Data Source
AI summary
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory device, which includes levels of dielectric materials; levels of conductive materials interleaved with the levels of dielectric materials, the levels of conductive materials including a first conductive level and a second conductive level; a memory cell string including a pillar extending in a direction from the first conductive level to the second conductive level, the second conductive level including a side wall; and a conductive contact extending in the direction from the first conductive level to the second conductive level, the conductive contact including a first portion separated from the first conductive level by a dielectric material, and a second portion adjacent the side wall of the second conductive level.