Semiconductor Memory Control Circuit Voltage Drop Protection

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Solution Overview

Problem

Sudden drops in voltage applied to semiconductor memory devices can cause malfunctions due to discharge of bit lines and channels, leading to improper programming and data loss.

Innovation Solution

A control circuit that compares external voltage with a reference voltage, activating a detection signal to keep the device in a busy state, disabling pump and micro clocks, and resetting the microcontroller, while discharging all word lines to prevent malfunctions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the device continues operating when voltage drops, then data processing can be maintained, but malfunctions and data loss occur due to bit line and channel discharge

Engineering Contradiction:

Improvedata integrityVSAvoidoperation continuity

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The detection circuit proactively monitors voltage levels and triggers termination sequences before complete voltage failure occurs. When voltage drops below the threshold, the system immediately initiates controlled termination of word lines and channels to prevent malfunction, rather than attempting to continue operation under insufficient voltage conditions.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The voltage drop, which is normally a harmful event causing malfunctions, is converted into a controlled termination signal. The detection circuit interprets the voltage drop as a command to execute the termination sequence, transforming the harmful voltage failure condition into a beneficial controlled shutdown that prevents data loss and device malfunction.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

2Reliability

If voltage monitoring and termination sequences are implemented, then malfunctions are prevented, but device complexity increases

Engineering Contradiction:

Improvemalfunction preventionVSAvoidcontrol circuit structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The detection circuit is merged with the existing control circuitry of the semiconductor memory device. The voltage monitoring function is integrated into the control logic that already manages word line and channel operations, rather than adding a completely separate monitoring system. This integration minimizes the increase in device complexity while achieving reliable malfunction prevention.

Inventive Principle:

Principle #5Merging (Combining)

Data Source

PatentUS8953383B2Operating circuit controlling device, semiconductor memory device and method of operating the same

Publication Date: 2015.02.10 SK HYNIX INC

AI summary

A semiconductor memory device is kept in a busy state by controlling a ready/busy pad when a detection signal is output since an external voltage is less than a reference voltage, prevents generation of an operating voltage by a pump circuit by preventing generation of a pump clock, and resets a microcontroller by preventing generation of micro clock. Accordingly, the semiconductor memory device may be prevented from malfunctioning through a series of operations when the external voltage is less than the reference voltage.