3D Network Capacitor Structure for High-Capacitance Semiconductor Packages
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving sufficient capacitance in a limited area, as conventional capacitors do not effectively utilize space and materials to enhance capacitance.
Innovation Solution
A semiconductor device with a capacitor featuring a three-dimensional network structure, comprising a first electrode, a dielectric layer, and a second electrode, where the electrodes and dielectric layers have embossed surfaces to maximize surface area, and are connected through conductive particles using a sintering process under mild conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional planar capacitor structures are used, then the device structure is simple, but the capacitance per unit area is insufficient
Solution Approach 1:
The patent transitions from a conventional planar (2D) capacitor structure to a three-dimensional network structure where conductive particles are arranged in multiple layers and connected by conductive vias. This dimensional change allows the electrode to occupy vertical space within the recess region, dramatically increasing the effective surface area of the electrode without expanding the planar footprint, thereby achieving higher capacitance in a limited area.
Solution Approach 2:
The electrode is constructed as a porous three-dimensional network consisting of conductive particles arranged in multiple layers with interconnected voids. This porous structure maximizes the surface area of the conductive material within the available volume, providing more interface for charge storage and thus increasing capacitance while maintaining a compact form factor.
2Quantity of substance
If equivalent oxide thickness of the dielectric layer is reduced to increase capacitance, then capacitance increases, but manufacturing precision requirements increase
Solution Approach 1:
Instead of relying on reducing the thickness of a single dielectric layer to increase capacitance, the patent creates a replicated three-dimensional structure with multiple layers of electrodes and dielectric materials. The capacitance enhancement is achieved through the multiplicative effect of multiple dielectric layers stacked vertically, each contributing to the total capacitance, thereby avoiding the need to manufacture extremely thin dielectric layers with high precision.
3Quantity of substance
If high dielectric constant materials are used to increase capacitance, then capacitance improves, but material selection and manufacturing complexity increase
Solution Approach 1:
The capacitor employs a composite structure combining conductive particles (such as metal or conductive oxide particles) with dielectric materials forming a three-dimensional network. This composite approach allows the use of conventional materials with moderate dielectric constants while achieving high effective capacitance through the enhanced surface area and multi-layer architecture, avoiding the need to source and process specialized high-k materials that would complicate manufacturing.
4Quantity of substance
If three-dimensional network structure with embossed surfaces is formed, then surface area and capacitance increase, but device complexity increases
Solution Approach 1:
The three-dimensional electrode is segmented into multiple discrete conductive particle layers, each layer being relatively simple in structure. The layers are connected through conductive vias that pass through the dielectric material. This segmentation allows each layer to be formed using standard deposition techniques, and the overall complex three-dimensional structure is built up incrementally from simple components, making the manufacturing process more manageable despite the increased structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The three-dimensional network structure increases the surface area of the electrodes, improving capacitance while minimizing defects in the dielectric layers, thus enhancing the reliability and simplifying the manufacturing process.
Implementation Method 1
a first electrode having a three-dimensional network structure in which particles are connected with each other
Data Source
AI summary
A semiconductor device includes a substrate having a recess region, a first electrode in the recess region and having a three-dimensional network structure, a first dielectric layer in the recess region and covering the first electrode, a second electrode in the recess region and covering the first dielectric layer, and a molding layer filling a remaining portion of the recess region and covering the second electrode.