3D Package Structure With RDL Interconnect for Dense Die Integration

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Solution Overview

Problem

The semiconductor industry faces challenges in achieving high integration density and efficient packaging of electronic components due to limitations in miniaturization and packaging technologies, which affect the yield and reliability of 3D packaging and 3DIC devices.

Innovation Solution

A method involving the formation of a package structure that includes a device die and an interconnect die mounted on a carrier with a redistribution layer (RDL) structure, a package substrate, and a memory die, where the RDL structure connects the device and interconnect dies, and a heat sink is used for thermal management, along with encapsulants to ensure electrical and thermal integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If continuous reductions in minimum feature size are implemented to improve integration density, then more electronic components can be integrated into a given area, but manufacturing precision and reliability deteriorate

Engineering Contradiction:
Improveintegration densityVSAvoidminimum feature size
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent transitions from 2D planar packaging to 3D vertical stacking architecture, where multiple semiconductor dies are stacked vertically and connected through through-silicon vias (TSVs). This dimensional change allows integration density to increase volumetrically rather than areally, avoiding the manufacturing precision limitations of continuous miniaturization while achieving higher component density through vertical integration of logic die, memory die, and passive component dies.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Area of stationary object

If package size is reduced to accommodate smaller components, then area utilization improves, but thermal management and electrical signal transmission deteriorate

Engineering Contradiction:
Improvepackage areaVSAvoidthermal dissipation
Core Design Contradiction:
Area of stationary objectVSTemperature

Solution Approach 1:

The patent implements nested encapsulation structures where first encapsulant material embeds the logic die and TSVs, second encapsulant material embeds the memory die, and third encapsulant material provides final protection. This nested arrangement maximizes space utilization within the compact package while maintaining proper thermal pathways and electrical isolation, allowing efficient thermal management despite the reduced package footprint.

Inventive Principle:
Principle #7Nested doll (Nesting)

3Quantity of substance

If 3D packaging architecture is implemented to improve integration density, then component density increases, but manufacturing complexity and yield deteriorate

Engineering Contradiction:
Improvecomponent densityVSAvoidpackaging architecture
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent divides the semiconductor device into separate functional segments: logic die with TSVs, memory die, and passive component die, each fabricated and tested independently before final assembly. This segmentation allows each die to be optimized and validated separately, reducing the complexity of manufacturing the entire 3D structure while maintaining high component density through systematic integration of the segmented components.

Inventive Principle:
Principle #1Segmentation

4Reliability

If multiple encapsulant layers are used to ensure electrical and thermal integrity, then reliability improves, but manufacturing process complexity deteriorates

Engineering Contradiction:
Improveelectrical and thermal integrityVSAvoidencapsulation process
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies different encapsulant materials (first, second, and third encapsulant materials) to different regions and functional layers of the device. The first encapsulant protects the logic die and TSVs, the second encapsulant protects the memory die, and the third encapsulant provides final environmental protection. This localized application of specialized encapsulant materials ensures optimal electrical and thermal integrity for each functional region while maintaining a systematic manufacturing approach.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the integration density, reduces packaging size, improves electrical signal transmission speed, and increases the reliability of high-speed operations by providing efficient electrical routing and thermal dissipation, thus addressing the limitations of existing packaging technologies.

Implementation Method 1

a heat sink is used for thermal management

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

a heat sink is used for thermal management

Methodology Applied
Scientific EffectThermal convection: Convection

Data Source

PatentUS11855057B2Package structure and method of forming the same
Publication Date: 2023.12.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11855057B2 patent drawing
  • US11855057B2 patent drawing
  • US11855057B2 patent drawing

AI summary

Provided are a package structure and a method of forming the same. The method includes: laterally encapsulating a device die and an interconnect die by a first encapsulant; forming a redistribution layer (RDL) structure on the device die, the interconnect die, and the first encapsulant; bonding a package substrate onto the RDL structure, so that the RDL structure is sandwiched between the package substrate and the device die, the interconnect die, and the first encapsulant; laterally encapsulating the package substrate by a second encapsulant; and bonding a memory die onto the interconnect die, wherein the memory die is electrically connected to the device die through the interconnect die and the RDL structure.