3D Semiconductor Bonding with Thermal Vias for Heat Dissipation
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Solution Overview
Problem
Three-dimensional integrated circuits (3D-ICs) face significant challenges in heat removal due to increased power density and high thermal resistance, particularly in stacked configurations where heat transfer from semiconductor layers to heat sinks is inefficient, often relying on ineffective materials like insulating oxides and dielectrics that do not conduct heat well.
Innovation Solution
The implementation of thermally conductive materials and structures, such as heat spreaders, thermally conductive shallow trench isolation, pre-metal dielectric regions, and etch stop layers, along with thermal contacts and vias, to enhance heat transfer pathways and reduce thermal resistance, allowing for more effective heat dissipation from transistors to the heat removal apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple layers of transistors are stacked in 3D configuration, then transistor density and performance improve, but heat removal efficiency deteriorates due to increased power density and high thermal resistance
Solution Approach 1:
The patent transitions from 2D planar heat dissipation to 3D vertical heat dissipation by stacking multiple transistor layers. Heat spreaders and thermal vias are positioned at different vertical levels to conduct heat away from stacked transistors in the third dimension, enabling effective thermal management in high-density 3D configurations
Solution Approach 2:
The patent introduces intermediate thermal management structures including heat spreaders positioned between transistor layers and thermal vias that extend through multiple layers. These intermediary elements facilitate heat transfer from upper transistor layers to lower heat sink structures, bridging the thermal path through the stacked configuration
2Reliability
If insulating oxide and dielectric materials are used in 3D stacked structures, then electrical isolation is achieved, but heat transfer capability deteriorates due to high thermal resistance
Solution Approach 1:
The patent applies different material properties to different spatial locations: insulating oxides and dielectrics are used in regions requiring electrical isolation between transistor layers, while thermally conductive materials are strategically positioned in heat spreaders and thermal vias where heat transfer is critical. This localized material selection optimizes both electrical isolation and thermal management in different regions of the 3D structure
Solution Approach 2:
The patent employs composite material structures combining electrically insulating but thermally conductive materials in heat spreaders and thermal management layers. These composite materials simultaneously provide the necessary electrical isolation while maintaining effective heat transfer pathways through the stacked transistor layers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves heat removal efficiency in 3D-ICs by reducing thermal resistance and maintaining transistors within desirable temperature limits, even in stacked configurations, thereby enhancing the performance and reliability of 3D integrated circuits.
Implementation Method 1
The implementation of thermally conductive materials and structures, such as heat spreaders, thermally conductive shallow trench isolation, pre-metal dielectric regions, and etch stop layers, along with thermal contacts and vias, to enhance heat transfer pathways and reduce thermal resistance
Data Source
AI summary
A 3D semiconductor device a first level, where the first level includes a first layer which includes first transistors, where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer which includes second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections and a plurality of connection paths, where the plurality of connection paths provides connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, where the second level includes at least one first ElectroStatic Discharge (ESD) circuit, and where the first level includes at least one second ESD circuit.