3D Semiconductor Structures for Radiation Hard Radioisotope Batteries
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Solution Overview
Problem
Conventional planar radioisotope batteries suffer from efficiency, flexibility, scalability, and low output power issues, and are susceptible to radiation-induced damage, which reduces their performance over time.
Innovation Solution
The development of three-dimensional semiconductor structures with cavity regions and a semiconductor material that enables the migration of radiation-induced damage to the surface, allowing for high energy particle and/or ray emissions, thereby maintaining output power and enhancing radiation hardness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional planar radioisotope batteries are used, then they are inexpensive to produce and simple in structure, but they suffer from low efficiency, low output power, and susceptibility to radiation-induced damage
Solution Approach 1:
The patent transitions from conventional two-dimensional planar semiconductor structures to three-dimensional structures with vertical cavities. This dimensional change increases the surface area-to-volume ratio, allowing more radiation-induced damage to reach the surface and be removed, thereby improving radiation hardness without proportionally increasing overall device complexity
Solution Approach 2:
The semiconductor structure is divided into multiple vertical columns or pillars with cavities between them. This segmentation creates multiple independent pathways for damage migration to the surface, enhancing the overall radiation tolerance while maintaining a manageable structural complexity through repetitive modular units
2Productivity
If conventional planar radioisotope batteries are used, then they have simple manufacturing processes, but they exhibit low efficiency and low output power in the microwatt range
Solution Approach 1:
By transitioning to three-dimensional vertical structures, the patent increases the active volume and surface area for charge generation and collection without proportionally increasing manufacturing steps. The vertical architecture allows better utilization of the radioactive material and improved charge carrier collection efficiency, boosting output power beyond the microwatt range
Solution Approach 2:
The patent optimizes key parameters including the dimensions of the three-dimensional structures (height, width, spacing), the type and distribution of radioactive material, and the semiconductor material properties. These parameter adjustments enhance the efficiency of energy conversion and output power while maintaining manufacturing feasibility through established semiconductor fabrication techniques
3Reliability
If conventional planar radioisotope batteries are used, then they maintain reasonable chemical energy conversion, but they are susceptible to radiation-induced damage that reduces efficiency and output over time
Solution Approach 1:
The patent exploits the harmful radiation-induced damage by designing a structure where such damage naturally migrates to the surface through the vertical cavities. Once at the surface, the damage can be removed or annealed, converting the potentially harmful accumulation of defects into a self-healing mechanism that maintains long-term durability
Solution Approach 2:
The three-dimensional vertical architecture provides additional pathways and reduced diffusion distances for radiation-induced damage to reach the surface compared to planar structures. This dimensional advantage accelerates damage removal kinetics, significantly improving the long-term reliability and durability of the radioisotope battery
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The three-dimensional semiconductor structures demonstrate improved electronic performance, increased radiation hardness, and higher output power compared to two-dimensional structures, with radiation-induced damage mitigated at a rate of at least 90%, leading to more efficient and durable power generation in radiation-heavy environments.
Implementation Method 1
a radioactive source emits nuclear radiation, e.g. alpha or beta particles, which produces electron-hole pairs within a planar semiconductor material
Implementation Method 2
enables migration (e.g., drift and/or diffusion) of radiation-induced damage to a surface of the respective three dimensional structure
Implementation Method 3
enables migration (e.g., drift and/or diffusion) of radiation-induced damage to a surface of the respective three dimensional structure
Data Source
AI summary
According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.