3D Tracking Semiconductor Detector Using Relative Timing
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Solution Overview
Problem
Existing pixel detectors can only provide two-dimensional information of radiation fields, limiting their ability to capture three-dimensional data on particle trajectories or events, which requires multiple detectors stacked together.
Innovation Solution
A pixel detector with neighboring read-out circuits connected by a relative timing circuit to determine time difference information, allowing for the extraction of Z-component location information of charge generation, enabling three-dimensional radiation information without the need for a high-speed clock, thus maintaining moderate power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of information
If multiple pixel detectors are stacked together to obtain three-dimensional radiation information, then the completeness of three-dimensional data is improved, but the device complexity and cost increase
Solution Approach 1:
The patent introduces a temporal dimension by measuring the arrival time of charges at neighboring read-out circuits. This time information serves as an additional dimension that encodes spatial information about the Z-component of charge generation locations, enabling 3D reconstruction from a single 2D sensor layer without stacking multiple detectors.
Solution Approach 2:
The patent uses charge drift time as an intermediary parameter to indirectly determine the Z-component of particle interaction locations. Instead of directly measuring Z-position with multiple stacked detectors, the arrival time of charges at read-out circuits serves as a mediator that encodes depth information, allowing 3D reconstruction through temporal measurement.
2Measurement precision
If a high-speed clock is used to determine time difference information between neighboring read-out circuits, then the measurement precision of time differences is improved, but the power consumption increases
Solution Approach 1:
The patent implements self-service by having each read-out circuit autonomously determine the arrival time of charges and generate timing signals without requiring a centralized high-speed clock. The relative timing circuit compares signals from neighboring circuits using their own timing references, enabling precise time difference measurement while avoiding the power consumption overhead of a system-wide high-speed clock.
Solution Approach 2:
The patent segments the timing measurement function by distributing timing determination capabilities to individual read-out circuits rather than using a centralized clock system. Each circuit independently measures arrival times, and relative timing is determined by comparing these distributed measurements, reducing the need for high-speed synchronous clocking across the entire detector.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the reconstruction of three-dimensional information from a single semiconductor sensor layer with high precision and low power consumption, suitable for applications like Compton cameras, Hadron therapy, and neutron imaging.
Implementation Method 1
Ionizing radiation produces free electrons and holes in the semiconductor material
Implementation Method 2
When an X-ray or gamma quantum strikes the detector, the spatial distribution of sensor elements that are affected within a read-out cycle are obtained
Implementation Method 3
the Z-component, i.e. the location in thickness direction of the semiconductor sensor, is accounted for. Although the semiconductor sensor layers of prior art pixel detectors had a certain thickness, the location of charge generation in thickness direction was never accounted for
Data Source
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AI summary
The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighbouring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.