Radiation Controlled Devices TRIZ Cases

A solid-state imaging device integrates a p-type semiconductor region under an n-type charge accumulation layer to boost signal sensitivity.

HgTe nanoparticles form photoabsorptive layers that generate photoluminescence peaks across the 1.7 to 12 μm range.

Segmented polysilicon and silicide gate conductors reduce dark current in CMOS image sensors.

Wafer-level molding forms a light path blocking structure that reduces stray light, enabling efficient packaging without complex filter adjustments.

A pixel structure uses a reversely biased well to encapsulate the photosensitive area within an epitaxial layer.

Segmenting the glass wafer with an intermediate layer reduces stress and prevents warpage, allowing a thickness under 200 µm without compromising reliability.

Metal diffusion creates an overdoped conductive mesh between adjacent diodes, stabilizing the interface and reducing noise in high flux imaging applications.

Time-multiplexed control of shared source follower circuits reduces transistor count per pixel, enabling high-density two-dimensional pH distribution imaging.

Shield bumps positioned diagonally between adjacent interconnect lines intercept capacitive coupling signals, ensuring accurate pixel data readout.

A PN-structured gate demodulation pixel generates electric drift fields via p-n junctions to transport charge efficiently.

A lateral single-photon avalanche diode uses a trench-filled doped region to create a horizontal pn-junction across epitaxial layers.

Segmenting charge removal structures from detection units resolves the speed-complexity trade-off in fast-gated electromagnetic radiation detectors.

Segmented P region doping creates efficient electric field distribution to enhance near-infrared photon detection probability while reducing transit time.

Relative timing circuits measure charge arrival differences at neighboring read-out nodes to extract Z-component location data from a single sensor layer.

Sub-pixel calibration corrects inhomogeneous charge collection across detector surfaces, improving energy resolution and gain stability.

Asymmetric shared optics in a time-of-flight sensor device direct reflected light to the detector, resolving efficiency loss caused by parallax errors.

Vertical capacitor layers above the pixel array provide power decoupling and clock stabilization, resolving peripheral area constraints in compact sensors.

Elastic membranes deform to flatten rigid substrates for component mounting, then recover curvature to shape circuits without constant external force.

Segmented dynamic photodiodes reduce power consumption by applying periodic reset pulses to clear accumulated charge while maintaining detection accuracy.

A hybrid optical detector unit integrates distinct sensing elements and a common read circuit to expand operational wavelength coverage.

Shielding interconnect layers with output wires reduces sense node capacitance in CMOS active pixel sensors.

Volumetric substrate swelling bends the image sensor to reduce chromatic and spatial aberrations while maintaining mechanical strength.

An inclined micro prism redirects chief ray angles to reduce optical crosstalk between adjacent pixels in image sensors.

A demodulation pixel uses a buried channel and high-low junction to generate drift fields for rapid charge transport.

A conductive layer deposited over the dielectric interlayer spreads tribo-electric charges to protect switching transistors.

A multilayer image sensor pixel structure uses a collector layer to sweep away photo-generated carriers before they reach adjacent photodiodes.

A tunnel junction photo detector generates high photoelectric currents via quantum tunneling in V-groove structures.

A stacked CMOS image sensor merges multiple photodiodes onto a shared floating diffusion node, restoring signal levels degraded by shrinking pixel sizes.

A photodiode field electrode compresses the lateral space charge region to minimize peripheral dark current.

Textured surfaces in backside illuminated photodetectors minimize stress-induced carrier generation, preserving spectral sensitivity during component mounting.

Tapered light pipes lined with reflective metal capture light at larger angles without increasing crosstalk or reducing resolution.

A light receiving element uses a groove surrounding the diffusion layer boundary to reduce carrier travel distance.

Offsetting microlens centers from photoelectric conversion regions disperses stress concentrations while maintaining high photo sensing efficiency.

Doping colored resin with infrared-absorbing particles merges visible filtering and detection, eliminating thick filter shadowing.

A PMOS pixel structure uses an n-type well to drive excess carriers into the substrate.

Resizing detection entities in hybrid matrix image sensors through dynamic electrical reconfiguration of photosensitive element connections.

A single-piece molded enclosure absorbs impact forces, reducing weight and assembly complexity for portable x-ray detectors.

Segmenting pixels with a meta-surface resolves spatial coherence loss in multi-band detection by focusing MWIR and LWIR beams on distinct areas.

A switchable capacitor adjusts the input node capacitance of an amplifier transistor in an imaging device.

A mammography detector uses a snap-off frame edge to align the active area.

Direct scintillator deposition on CMOS imagers eliminates protective coatings that degrade light transparency, restoring detective quantum efficiency.

White pixels capture luminance while colored pixels handle chroma, reducing near-infrared interference without global filters.

Embedding the electronic chip in a sealant prevents air bubbles and structural defects caused by suspending larger sensor chips during wire-bonding.

Vertical guard rings and buried isolation layers enable avalanche photodiodes on silicon substrates.

A stacked solid-state imaging device uses separate substrates with distinct ground potentials to manage electrical signals.

Simultaneous deposition of alternating amorphous silicon and dielectric layers creates integrated infrared bandpass filters on image sensor interconnection levels.

Iodine treatment passivates recombinant centers on the detector surface, maintaining composition gradients and enhancing sensitivity.

A back-side illuminated photovoltaic transistor uses a photoactive layer in a cavity to generate illumination-dependent photovoltage.