Fast-Gated Detector With Segmented Charge Removal
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Solution Overview
Problem
Current semiconductor detectors for electromagnetic radiation, such as visible and NIR light, face limitations in speed and compactness due to the need for both charge detection and removal, which can be improved by optimizing the flow of majority current to direct minority charge carriers effectively.
Innovation Solution
A detector device with minority charge detection and removal structures, along with a substrate majority charge current sink, allows for fast-gated detection by controlling the flow of majority current to direct minority charge carriers either towards or away from the detection structures, utilizing a pn junction and common terminal for efficient charge management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single charge detection structure is used for both detection and removal of minority charge carriers, then device complexity is reduced, but detection speed and gate control performance deteriorate
Solution Approach 1:
The detector structure is segmented into separate charge detection structures and charge removal structures. Each detection structure is paired with dedicated removal structures, allowing independent optimization of detection and removal functions. This segmentation enables fast gate control by independently managing the removal of minority charge carriers without interfering with the detection process.
2Measurement precision
If majority current is injected to create electric field for directing minority charge carriers towards detection structures, then detection efficiency is improved, but device complexity and current management requirements increase
Solution Approach 1:
The majority charge contacts serve multiple functions: they inject majority current to create electric fields for directing minority charge carriers toward detection structures, and they also serve as current sinks for extracting majority current. This multi-functionality simplifies the overall device structure while maintaining efficient charge carrier management.
3Speed
If fast-gated detection is implemented by optimizing minority charge carrier removal, then detection speed is improved, but device complexity increases due to additional removal structures
Solution Approach 1:
The charge removal function is extracted as separate, dedicated structures paired with each detection structure. These removal structures are specifically optimized for fast removal of minority charge carriers without the complexity of combining detection and removal functions in a single structure. The extraction of this function enables independent optimization of removal speed.
4Productivity
If multiple removal structures are provided per detection structure, then charge removal efficiency is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
Adjacent detection structures share common removal structures, reducing the total number of removal structures needed. This merging approach maintains efficient charge removal for each detection structure while reducing overall device complexity and manufacturing difficulty. The shared removal structures are strategically positioned to serve multiple detection structures effectively.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables fast-gated detection by optimizing the removal and detection of minority charge carriers, enhancing the speed and compactness of the detector device.
Implementation Method 1
injecting a majority current so as to create an electric field for directing minority charge carriers towards the at least one minority charge detection structure
Implementation Method 2
the doped region of the second conductivity type being close to the doped region of the first conductivity type, and forming a pn junction with the substrate
Implementation Method 3
detection of electromagnetic radiation impinging on a substrate, whereby the impinging radiation generates pairs of majority and minority charge carriers in the substrate
Data Source
Figure 1A~1B
Figure 2A~2B
Figure 3A~3D
AI summary
A detector device (304) for detection of electromagnetic radiation impinging on a substrate (307) and generating pairs of majority and minority charge carriers in the substrate (307), comprises at least one minority charge detection structure (300) for, in a first mode, injecting a majority current so as to create an electric field (302) for directing minority charge carriers towards the at least one minority charge detection structure for detecting minority charge carriers generated in the substrate (307); two or more minority charge removal structures (301) per minority charge detection structure (300) for, in a second mode, injecting a majority current so as to create an electric field (303), for draining minority charge carriers towards the two or more minority charge removal structures (301), away from the associated charge detection structure (300); and at least one substrate majority charge current sink (305) for extracting the injected majority current.