Switchable Capacitor for Imaging Device Input Node
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Solution Overview
Problem
Current imaging devices face challenges in varying the capacitance value of the input node of an amplifier transistor, which affects the dynamic range and linearity of the output signal, particularly in handling large or small quantities of charge.
Innovation Solution
Incorporating a capacitor that can be switched between an electrically connected and unconnected state with the floating diffusion (FD) to adjust the capacitance value of the input node of the amplifier transistor, allowing for improved charge-voltage conversion efficiency and signal linearity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a capacitor is electrically connected to the floating diffusion to increase the capacitance value of the input node, then the dynamic range is expanded, but the charge-voltage conversion efficiency decreases
Solution Approach 1:
The capacitor is configured to be switchably connected to the floating diffusion, allowing the capacitance value of the input node to be dynamically adjusted between two states: connected (higher capacitance for expanded dynamic range) and unconnected (lower capacitance for higher charge-voltage conversion efficiency). This dynamic reconfiguration enables the system to adapt to different signal conditions.
Solution Approach 2:
The invention changes the capacitance parameter of the input node by switching the capacitor's connection state. When the capacitor is connected, the input node capacitance increases to expand dynamic range; when disconnected, the capacitance decreases to improve charge-voltage conversion efficiency. This parameter switching allows optimization for different operating conditions.
2Measurement precision
If the capacitance value of the input node is increased to handle large quantities of charge, then the linearity of the output signal is improved, but the area occupied by the capacitor increases
Solution Approach 1:
Rather than providing a large capacitor that would always occupy significant area, the invention uses a capacitor that can be dynamically switched. The capacitor only occupies active space when connected to provide linearity for large charge quantities, and can be disconnected when high dynamic range is needed, effectively sharing the area requirement between two functional states.
Solution Approach 2:
The capacitor serves multiple functions depending on its connection state: it provides linearity improvement for large charge quantities when connected, and enables dynamic range expansion when disconnected. This multi-functionality allows a single capacitor structure to address different signal conditions without requiring separate dedicated components for each function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables variable dynamic range and improved linearity of the output signal by adjusting the capacitance value, enhancing the imaging device's ability to handle varying charge quantities effectively.
Implementation Method 1
a capacitor 208 capable of varying a capacitance value of an input node of an amplifier transistor 205
Data Source
Figure 1
Figure 2
Figure 3(a)~3(b)
AI summary
An imaging device (101) according to an embodiment of the present invention includes a plurality of pixels. Each of the pixels has an active region (313A, 313B) including a first region (323) and a second region (324) with an electrode (404) therebetween in plan view. A portion that is a portion of the active region (313A, 313B) and that is located under the electrode (404) forms at least a portion of a capacitor (208). The first region (323) includes a first semiconductor region (303B) of a first conductivity type that forms at least a portion of a floating diffusion (203), and the second region (324) includes a second semiconductor region (312) of a second conductivity type opposite to the first conductivity type. An insulating film (316) is disposed on the second semiconductor region (312).