3DIC Interfacial Structure With Thermal Layers for Heat Dissipation
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Solution Overview
Problem
Conventional intermetal dielectric materials in three-dimensional integrated circuits (3DICs) fail to meet thermal management demands due to low intrinsic thermal conductivity, impacting performance and reliability at high temperatures.
Innovation Solution
Incorporation of high thermal conductivity layers, such as SiC, SiN, AlN, BN, diamond, DLC, graphene oxide, or graphite, within the interconnection structure to enhance thermal dissipation and improve bonding efficiency in 3DICs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional intermetal dielectric materials (such as SiO2) are used in 3DICs, then the manufacturing process is simple and cost-effective, but the thermal conductivity is insufficient to meet thermal management demands at high temperatures
Solution Approach 1:
The patent employs composite interconnection structures combining metal layers with dielectric materials having high thermal conductivity (such as SiC, SiN, AlN, BN, diamond, DLC, graphene oxide, or graphite). This composite approach enables the structure to simultaneously provide electrical connectivity and superior thermal management, resolving the contradiction between simple manufacturing and high thermal conductivity requirements.
Solution Approach 2:
The patent changes the thermal conductivity parameter of the interconnection structure by selecting dielectric materials with inherently high thermal conductivity properties. This parameter change allows the structure to meet thermal management demands without fundamentally altering the manufacturing process complexity, as these materials can be integrated using existing semiconductor fabrication techniques.
2Reliability
If high thermal conductivity layers are incorporated into the interconnection structure, then thermal management capabilities are enhanced, but the manufacturing process becomes more complex
Solution Approach 1:
The patent incorporates high thermal conductivity layers into the interconnection structure during the initial fabrication process, before the bonding step. This preliminary action ensures that the thermal management capability is built-in from the start, and the bonding process itself can be performed at elevated temperatures without compromising the structural integrity or requiring additional complex post-bonding thermal management modifications.
Solution Approach 2:
The use of composite materials with high thermal conductivity enables the structure to withstand high bonding temperatures while maintaining structural integrity. This resolves the contradiction by allowing the bonding process to proceed at temperatures that ensure reliable bonding, while the composite structure simultaneously provides the necessary thermal management capabilities.
3Loss of energy
If conventional dielectric materials are used, then the manufacturing process is simpler, but thermal dissipation is insufficient leading to performance degradation at high temperatures
Solution Approach 1:
The patent uses composite interconnection structures with dielectric materials having high thermal conductivity (SiC, SiN, AlN, BN, diamond, DLC, graphene oxide, or graphite) to enhance thermal dissipation. These composite structures maintain electrical connectivity while providing superior thermal pathways, resolving the contradiction between simple manufacturing and efficient thermal dissipation.
Solution Approach 2:
The patent applies high thermal conductivity materials specifically in regions where thermal dissipation is most critical, such as near heat-generating components or in thermal management layers. This local quality approach enhances thermal dissipation efficiency without requiring the entire interconnection structure to be redesigned, thus limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances thermal management capabilities and bonding processes in 3DICs, leading to improved performance and reliability by increasing thermal conductivity beyond that of conventional dielectric materials.
Implementation Method 1
Incorporation of high thermal conductivity layers, such as SiC, SiN, AlN, BN, diamond, DLC, graphene oxide, or graphite, within the interconnection structure to enhance thermal dissipation
Data Source
AI summary
An interfacial structure, along with methods of forming such, are described. The structure includes a first interfacial layer having a first dielectric layer, a first conductive feature disposed in the first dielectric layer, and a first thermal conductive layer disposed on the first dielectric layer. The structure further includes a second interfacial layer disposed on the first interfacial layer. The second interfacial layer is a mirror image of the first interfacial layer with respect to an interface between the first interfacial layer and the second interfacial layer. The second interfacial layer includes a second thermal conductive layer disposed on the first thermal conductive layer, a second dielectric layer disposed on the second thermal conductive layer, and a second conductive feature disposed in the second dielectric layer.