Acoustic Resonator Seed Layer for Crystal Orientation

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Solution Overview

Problem

Conventional acoustic transducers face inefficiencies due to random crystal orientations of piezoelectric materials like zinc oxide (ZnO), which result in reduced piezoelectric response and coupling coefficients, leading to suboptimal performance in devices such as film bulk acoustic resonators (FBARs).

Innovation Solution

A method is introduced where a seed layer is formed on a semiconductor substrate, followed by a piezoelectric layer directly deposited on this seed layer, ensuring that the c-axis orientations of the piezoelectric crystals are substantially perpendicular to the seed layer surface, thereby maximizing the coupling coefficient and piezoelectric response. This involves forming a first seed layer, a first electrode layer, a second seed layer, and a piezoelectric layer with the second seed layer promoting aligned c-axis orientations of the ZnO crystals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a piezoelectric layer is formed directly on an electrode layer without a seed layer, then the fabrication process is simpler, but the crystal orientations become random and piezoelectric response is reduced

Engineering Contradiction:
Improvefabrication process simplicityVSAvoidcrystal orientation alignment
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

A seed layer is introduced as an intermediary between the electrode layer and the piezoelectric layer. This seed layer serves as a mediator that promotes epitaxial growth and enables controlled crystal orientation of the piezoelectric material, specifically achieving c-axis perpendicular orientation, while still maintaining a relatively simple fabrication process.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If seed layers are used to control crystal orientation, then piezoelectric response is improved, but the fabrication process becomes more complex

Engineering Contradiction:
Improvecrystal orientation alignmentVSAvoidfabrication process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent controls crystal orientation by changing the parameters of the seed layer, including its material composition, thickness (typically 1-10 nm), and deposition conditions. By optimizing these parameters, the seed layer effectively controls the c-axis orientation of the piezoelectric layer without requiring overly complex fabrication processes.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If crystal orientations are random, then the fabrication process is simpler, but the coupling coefficient and piezoelectric response are reduced

Engineering Contradiction:
Improvefabrication process simplicityVSAvoidpiezoelectric response
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The seed layer performs a preliminary action by establishing the desired crystal orientation framework before the main piezoelectric layer is deposited. This preliminary structuring ensures that when the piezoelectric material grows, it adopts the correct c-axis perpendicular orientation, thereby guaranteeing high piezoelectric response and coupling coefficient from the outset.

Inventive Principle:
Principle #10Preliminary action

4Device complexity

If the piezoelectric layer is deposited directly on the electrode, then device structure is simpler, but most devices fail to meet minimum specifications

Engineering Contradiction:
Improvedevice structure complexityVSAvoiddevice specification compliance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The seed layer acts as a critical intermediary that bridges the electrode layer and the piezoelectric layer. Although it adds a thin layer to the structure, it dramatically improves device performance by ensuring proper crystal orientation, resulting in significantly higher specification compliance rates compared to direct deposition structures.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The approach significantly improves the coupling coefficient and piezoelectric response, enhancing the performance of acoustic transducers by aligning the c-axis of the piezoelectric crystals, resulting in improved performance characteristics and reduced device size, with 80% of transducers meeting minimum specifications compared to 20% of conventionally formed devices.

Implementation Method 1

forming a piezoelectric layer directly on a surface of the seed layer. The piezoelectric layer includes crystals, such that the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Implementation Method 2

acoustic transducers, in particular, convert electrical signals to acoustic signals (sound waves) in a transmit mode... The piezoelectric layer 134 is formed of a thin film of piezoelectrice material... the ZnO should be synthesized with a specific crystal orientation... In order to take advantage of this piezoelectric coefficient, all of the ZnO crystals need to be oriented in substantially the same direction

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Data Source

PatentUS9608589B2Method of forming acoustic resonator using intervening seed layer
Publication Date: 2017.03.28 AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LTD
  • US9608589B2 patent drawing
  • US9608589B2 patent drawing
  • US9608589B2 patent drawing

AI summary

A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer.