Through-holes in the base portion alleviate distortion concentrations to improve drive level dependency while maintaining manufacturing precision.
Aluminum nitride piezoelectric film with controlled lattice ratio enhances electromechanical coupling in acoustic wave devices.
Integrating sealing and mounting functions into a single gasket eliminates screw holes, reducing the footprint of small cell filter assemblies.
Laser ablation and grinding adjust piezoelectric layer thickness variability, resolving the trade-off between manufacturing precision and cost.
A longitudinally coupled resonator acoustic wave filter uses apodization weights to vary electrode finger overlap widths.
Unreleased plane acoustic wave resonators use integrated acoustic reflectors to confine energy while attached to the substrate.
Seed layer aligns piezoelectric crystals perpendicular to the surface, fixing random orientation issues in acoustic transducers.
A quartz crystal resonator element uses a notched base with specific X-axis geometry to form a tuning fork structure.
An integrated structure of acoustic wave devices and varactors on a compound semiconductor substrate.
Varying dielectric film thickness suppresses high-order transverse mode waves without requiring special IDT electrode finger shapes.
Segmenting quartz crystal substrate processing into dry and wet etching steps prevents material deposition inside recessed areas, improving yield rates.
An inserted film within a piezoelectric thin film resonator acts as a fixed end to constrain oscillating waves.
Asymmetric oxide raised frames surround the central active region of a bulk acoustic wave resonator to optimize acoustic impedance interfaces.
Fin bulk acoustic resonator arrays overcome single-frequency limitations by varying fin dimensions to achieve continuous tuning across UHF and SHF bands.
A piezoelectric MEMS resonator integrates phase change material switches to enable dynamic frequency reconfiguration.
Non-overlapping connection wires suppress interference with digital circuit blocks, enabling larger memory areas on smaller substrates.
Laminating a silicon oxide layer on degenerate semiconductor tuning fork arms reduces the temperature coefficient of resonant frequency to within ±5 ppm/°C.
Surface acoustic waves from piezoelectric transducers pump e-liquid uniformly, resolving nonuniform atomization and harmful byproduct formation.