Active Contact and Gate Cut Layout for Dense Semiconductor FETs
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high integration, reliability, and multi-functionality due to limitations in electrical characteristics, particularly in the design of field effect transistors.
Innovation Solution
A semiconductor device design featuring a substrate with distinct active regions, device isolation layers, gate electrodes, source/drain patterns, and active contacts, where the active contact width and gate cutting pattern width ratio is optimized between 0.8 to 1.2, enhancing electrical characteristics through specific structural configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the active contact width is increased to improve electrical connection, then electrical characteristics are improved, but the device area increases and integration density decreases
Solution Approach 1:
The patent optimizes the ratio between active contact width and gate cutting pattern width to be between 0.8 and 1.2, achieving a balance between electrical connection quality and area efficiency. This parameter optimization allows sufficient electrical contact while minimizing the area occupied by contact structures.
2Area of stationary object
If the gate cutting pattern width is decreased to improve integration density, then device area is reduced, but the electrical connection reliability may be compromised
Solution Approach 1:
The patent establishes a specific ratio range (0.8-1.2) between active contact width and gate cutting pattern width, ensuring that the gate cutting pattern is not excessively narrow while maintaining high integration density. This parameter control prevents electrical connection failures.
Solution Approach 2:
The patent applies different structural configurations at different locations: the active contact and gate cutting pattern dimensions are specifically optimized in the critical connection region, while other areas of the device can be minimized for high density. This localized optimization maintains reliability where needed while maximizing overall integration.
3Ease of manufacture
If the device structure is simplified to reduce fabrication complexity, then manufacturing ease is improved, but electrical characteristics and integration capability are limited
Solution Approach 1:
The patent divides the device into distinct functional regions with clearly defined structures: active regions, device isolation layers, gate electrodes, source/drain patterns, active contacts, and gate cutting patterns. This segmentation allows each component to be optimized independently while maintaining overall electrical performance and facilitating standardized fabrication processes.
Data Source
AI summary
Disclosed is a semiconductor device including a substrate including first and second active regions, a device isolation layer on the substrate and defining first and second active patterns, first and second gate electrodes running across the first and second active regions and aligned with each other, first and second source/drain patterns on the first and second active patterns, a first active contact connecting the first and second source/drain patterns to each other, and a gate cutting pattern between the first and second gate electrodes. An upper portion of the first active contact includes first and second upper dielectric patterns. The first active contact has a minimum width at a portion between the first and second upper dielectric patterns. A minimum width of the gate cutting pattern is a second width. A ratio of the first width to the second width is in a range of 0.8 to 1.2.