Active Matrix Substrate Using Transparent Conductive Intermediary

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Solution Overview

Problem

The direct connection between Cu and Ti layers in gate and source metal layers can lead to electrical connection failures, resulting in reduced yield in active matrix substrates used for display devices.

Innovation Solution

An active matrix substrate with a two-layer structure for both gate and source metal layers, including a Ti layer and a Cu layer, is supported by a substrate, with insulating layers and a conductive layer that avoids direct contact between the Ti layer of the gate metal layer and the Cu layer, using a transparent conductive layer to facilitate connections without electrical failure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the source metal layer and gate metal layer are directly connected, then the manufacturing process is simplified, but electrical connection failure occurs and yield is reduced

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidelectrical connection reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

A transparent conductive layer is introduced as an intermediary between the source metal layer and gate metal layer. This intermediate layer prevents direct contact between Cu and Ti, eliminating the electrical connection failure while maintaining the manufacturing process efficiency. The transparent conductive layer serves as a mediator that enables both electrical connection and process simplicity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If Cu layer and Ti layer are directly contacted, then the device complexity is reduced, but the Cu layer and Ti layer are deteriorated

Engineering Contradiction:
Improvemetal layer structure complexityVSAvoidmetal layer composition stability
Core Design Contradiction:
Device complexityVSStability of the object's composition

Solution Approach 1:

The transparent conductive layer acts as a protective intermediary that prevents direct interaction between Cu and Ti layers. This intermediate barrier maintains the compositional stability of both metal layers by preventing deterioration, while the overall device complexity remains low due to the simple lamination structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If direct connection structure is used, then the production efficiency is improved, but the yield is reduced due to electrical connection failure

Engineering Contradiction:
Improveproduction efficiencyVSAvoidelectrical connection reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The transparent conductive layer serves as an intermediary that resolves the conflict between production efficiency and electrical connection reliability. By preventing direct contact between incompatible metal layers, it eliminates failure modes that would reduce yield, thereby maintaining high production efficiency without sacrificing reliability.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS10825843B2Active matrix substrate and method for producing same
Publication Date: 2020.11.03 SHARP KK
  • US10825843B2 patent drawing
  • US10825843B2 patent drawing
  • US10825843B2 patent drawing

AI summary

Provided is an active matrix substrate (100A) including: a gate metal layer (15) that has a two-layer structure composed of a Cu layer (15b) and a Ti layer (15a); a first insulating layer (16) on the gate metal layer (15); a source metal layer (18) that is formed on the first insulating layer (16) and has a two-layer structure composed of a Cu layer (18b) and a Ti layer (18a); a second insulating layer (19) on the source metal layer (18); a conductive layer (25) that is formed on the second insulating layer (19), and is in contact with the gate metal layer (15) within a first opening (16a1) formed in the first insulating layer (16) and is in contact with the source metal layer (18) within a second opening (19a2) formed in the second insulating layer (19); and a first transparent conductive layer (21) that is formed on the conductive layer (25) and includes any of a pixel electrode, a common electrode and an auxiliary capacitor electrode. The conductive layer (25) does not include any of the pixel electrode, the common electrode, and the auxiliary capacitor electrode, and does not have a Ti layer being in contact with the Cu layer (15b) of the gate metal layer (15).