Active Pattern Impurity Layout for Lower Transistor Leakage
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Solution Overview
Problem
In semiconductor device manufacturing, forming impurity regions with precise positions and areas is challenging due to misalignment of ion implantation masks, leading to suboptimal impurity region formation and increased leakage currents between PMOS and NMOS transistors.
Innovation Solution
The semiconductor device design includes active patterns with strategically stacked impurity regions of varying widths, allowing for precise ion implantation without the need for multiple masks, thereby reducing misalignment and enhancing device performance by controlling impurity concentrations and widths to minimize punch-through and leakage currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple ion implantation masks are formed to create impurity regions with different positions and areas, then the desired impurity regions can be formed, but misalignment occurs during mask formation leading to improper placement and area control
Solution Approach 1:
The patent divides the substrate into multiple regions (first region and second region) with different active patterns, allowing different impurity regions to be formed in each region. This segmentation enables tailored impurity region configurations for different transistor types without requiring multiple masks across the entire substrate.
Solution Approach 2:
The patent implements local quality by forming first impurity regions with specific characteristics in the first region and second impurity regions with different characteristics in the second region. Each region receives customized impurity doping tailored to its specific transistor requirements, improving overall device performance.
2Adaptability or versatility
If multiple ion implantation masks are used to form different impurity regions, then various impurity configurations can be achieved, but the formation process becomes more complex and time-consuming
Solution Approach 1:
By segmenting the substrate into distinct regions with different active patterns, the patent enables simultaneous formation of different impurity region configurations in a single ion implantation process, rather than requiring sequential mask formation for each region.
Solution Approach 2:
The patent creates a universal structure where a single ion implantation mask can serve multiple functions by forming different impurity regions across different regions of the substrate in one process step, improving manufacturing efficiency.
3Manufacturing precision
If misalignment occurs during ion implantation mask formation, then impurity regions are not formed at desired positions with desired areas, but maintaining strict alignment requirements increases process difficulty
Solution Approach 1:
The patent segments the substrate into regions with different active patterns that are designed to accommodate variations in impurity region formation. This segmentation makes the overall process more robust against alignment errors by isolating the impact to specific regions rather than affecting the entire substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively decreases punch-through phenomena in NMOS transistors and reduces leakage currents from PMOS to NMOS transistors, improving overall semiconductor device performance and reliability.
Implementation Method 1
An impurity region is formed by an ion implantation process on an active pattern on which a transistor is formed
Data Source
AI summary
A semiconductor device include first and second active patterns, first and second gate structures, and first and second source/drain layers. The first and second active patterns extend on the first and second regions in a first direction. The first and second gate structures are formed on the first and second active patterns, and extend in a second direction. The first and second source/drain layers are formed on the first and second active patterns adjacent to the first and second gate structures. The first active pattern includes a first well having first and second impurity regions. The second active pattern includes a second well having third and fourth impurity regions. A width in the second direction of the first impurity region is greater than that of the second impurity region. A width in the second direction of the third impurity region is smaller than that of the fourth impurity region.