Active Region Cut-Mask Layout for Corner-Rounding Removal
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Solution Overview
Problem
The formation of different-width active regions in semiconductor cell blocks poses challenges during the manufacturing of semiconductor devices, particularly in 3D-stacked devices, due to increased fabrication complexities.
Innovation Solution
A semiconductor device design that includes active regions with specific corner edge configurations, where the width of the active regions gradually changes along a direction, and a gate structure that overlaps the out-corner edge, helping to define and control the channel structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If different-width active regions are formed in a cell block to implement different logic circuits, then device performance and device density are improved, but fabrication challenges and manufacturing precision are worsened
Solution Approach 1:
The gate structure is formed to overlap the out-corner edge of the active region before the active region width variation occurs. This preliminary positioning of the gate structure establishes a reference framework that guides subsequent fabrication steps, ensuring that corner rounding is prevented even as active region widths vary to accommodate different logic circuits and achieve high device density.
Solution Approach 2:
The gate structure is selectively positioned to overlap specifically the out-corner edge of the active region, providing localized precision control at the critical corner area. This local quality approach allows different parts of the device to have different width characteristics while maintaining manufacturing precision at the corner regions through the targeted gate structure placement.
2Adaptability or versatility
If different-width active regions are formed in a cell block, then adaptability for different logic circuits is improved, but device complexity and fabrication difficulty are worsened
Solution Approach 1:
The gate structure serves multiple functions: it acts as the functional gate for the transistor, provides a reference for defining the out-corner edge position, and prevents corner rounding during fabrication. This multi-functionality allows the device to accommodate different logic circuit configurations with varying active region widths while maintaining a relatively simple fabrication process through the universal gate structure design.
Solution Approach 2:
The gate structure is selectively positioned to overlap specifically the out-corner edge of the active region, providing localized precision control at the critical corner area. This local quality approach allows different parts of the device to have different width characteristics while maintaining manufacturing precision at the corner regions through the targeted gate structure placement.
3Ease of manufacture
If corner rounding is allowed in active regions of different widths, then ease of manufacture is improved, but manufacturing precision and device reliability are worsened
Solution Approach 1:
The gate structure is formed to overlap the out-corner edge of the active region before the active region width variation occurs. This preliminary positioning of the gate structure establishes a reference framework that guides subsequent fabrication steps, ensuring that corner rounding is prevented even as active region widths vary to accommodate different logic circuits and achieve high device density.
Solution Approach 2:
The gate structure's position parameter is specifically set to overlap the out-corner edge, creating a fixed reference point that maintains corner precision. By controlling the spatial parameter of the gate structure placement, the invention achieves high corner precision without significantly complicating the overall fabrication process.
Data Source
Figure 1A
Figure 1B~1C
Figure 2
AI summary
Provided is a semiconductor device (40) which includes: a 1st active region (110, 120) extended in a 1st direction (D1) and including: a 1st out-corner edge (R11) at which a width of the 1st active region (110, 120) in a 2nd direction (D2) gradually changes along the 1st direction (D 1); and a 1st in-corner edge (R12) at which the width of the 1st active region (110, 120) less gradually changes along the 1st direction (D1) than at the 1st out-corner edge (R11); and a gate structure (153) extended in the 2nd direction (D2) and overlapping the 1st out-corner edge (R11) in a 3rd direction (D3), wherein the 1st direction (D1) horizontally intersects the 2nd direction (D2), and the 3rd direction (D3) vertically intersects the 1st direction (D1) and the 2nd direction (D2).