Active-Region Isolation Layout for COAG Shorting Limits
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Solution Overview
Problem
The Contact Over Active Gate (COAG) process faces limitations due to a minimum channel length that can result in device shorting and affects Fmax and FT, with widening active regions to address this issue leading to negative impacts on FT.
Innovation Solution
Incorporating shallow trench isolation structures within active regions, with gate structures overlapping these structures, and forming contacts to raised source/drain and gate regions, preventing shorting and enhancing Fmax while maintaining FT.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the channel length is reduced to enable aggressive scaling, then the standard cell height is reduced, but the risk of shorting between gate contact and source/drain contact increases
Solution Approach 1:
The gate contact is moved from the traditional position at the end-to-end spacing region to overlap with the active gate region in a different spatial dimension. This dimensional repositioning allows the contact to be placed over the gate structure itself, enabling shorter channel lengths without increasing the standard cell height while avoiding shorting risks through proper vertical stacking.
Solution Approach 2:
An insulating layer is introduced as an intermediary between the gate contact and the active gate region. This intermediate insulating structure prevents direct electrical contact (shorting) between the gate contact and the gate, while still allowing the contact to be positioned over the gate region for compact cell design.
Data Source
AI summary
The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures within the active region; a plurality of gate structures overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.