Continuous Active Region Isolation for Leakage Current Reduction

The continuous active region is segmented into multiple discrete active regions by introducing isolation structures (such as deep trench isolation or diffusion barriers) between adjacent active regions. This segmentation interrupts the continuous conductive path that causes leakage current while preserving the high-density layout benefits. The gate structures are also segmented or isolated to prevent floating gate effects from causing leakage between adjacent transistor regions.

Isolation structures serve as intermediary elements positioned between adjacent active regions and between metal over diffusion layers. These intermediaries (such as dielectric materials, deep trench isolation, or diffusion barriers) block the unwanted current flow paths while allowing the active regions to maintain their functional connectivity. The intermediaries effectively decouple the power domains without requiring complete physical separation of the high-density layout.

The metal over diffusion layers are segmented into separate sections using cut metal over diffusion (CMD) patterns or isolation structures. These segmentation features interrupt the continuous metal path between different power domains, preventing unwanted current flow while maintaining necessary electrical connectivity within each power domain. The segmentation allows independent control and isolation of different power regions.

Different regions of the metal over diffusion layers are given different properties through selective connectivity design. Some metal layers are made continuous in regions where power domain isolation is not needed, while being interrupted or isolated in regions where power domain separation is required. This local differentiation of connectivity properties allows the device to maintain overall functionality while blocking harmful current paths between specific power domains.