AFe-FE Memory Stack With Depolarization Layer for Weak Erase
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Solution Overview
Problem
Ferroelectric Random-Access Memory (FeRAM) devices face challenges in maintaining reliable non-volatile data storage due to weak erase issues during endurance cycling, particularly due to half butterfly polarization-voltage loop bias operations, which affect data retention and device performance.
Innovation Solution
Incorporating an anti-ferroelectric (AFe) domain in the memory film, along with a depolarization dielectric layer, to suppress weak erase states and improve switching between program and erase states, using a Hafnium-Zirconium Oxide (HZO) film with a significant AFe domain and a depolarization dielectric layer to destabilize the program state polarization, allowing for easier switching to the erase state with lower bias voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a depolarization dielectric layer is added to destabilize program state polarization, then switching to erase state becomes easier with lower bias voltage, but device structure complexity increases
Solution Approach 1:
The depolarization dielectric layer acts as an intermediary element between the electrode and the memory film. This intermediate layer generates a depolarization field that destabilizes the polarized program state, facilitating easier switching to the erase state with lower bias voltage. The dielectric layer mediates the interaction between the applied electric field and the ferroelectric domain, reducing the switching voltage requirement while maintaining a relatively simple planar device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances data retention and device performance by suppressing weak erase issues and achieving better-controlled data variation, with improved switching efficiency and reduced power consumption.
Implementation Method 1
Incorporating an anti-ferroelectric (AFe) domain in the memory film, along with a depolarization dielectric layer, to suppress weak erase states and improve switching between program and erase states
Implementation Method 2
using a Hafnium-Zirconium Oxide (HZO) film with a significant AFe domain and a depolarization dielectric layer to destabilize the program state polarization
Implementation Method 3
a depolarization dielectric layer to destabilize the program state polarization, allowing for easier switching to the erase state with lower bias voltage
Data Source
AI summary
A field-effect transistor (FET), selectively switchable between first and second states, includes: source and drain regions and a channel region disposed therebetween; a gate arranged to selectively receive a bias voltage which switches the FET between the first and second states; a memory structure between the gate and the channel region, structure including a first portion which is anti-ferroelectric and a second portion which is ferroelectric, both portions being polarized in a first direction when the FET is in the first state; and a depolarization dielectric layer disposed proximate to the memory structure. When the FET is set to the first state, the depolarization dielectric layer destabilizes a polarization of the second portion of the memory structure while maintaining a polarization of the first portion.