Air Gap Inter-Level Dielectric Structures for Semiconductor Devices
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Solution Overview
Problem
As semiconductor devices become smaller, increased parasitic capacitance between conductors leads to reduced signal frequencies and increased signal crosstalk, hindering performance and efficiency in modern integrated circuits.
Innovation Solution
The formation of air gap inter-level dielectrics between conductors, achieved by creating an air gap between conductors and encapsulating it with a self-supporting film, such as graphene, to reduce parasitic capacitance and crosstalk, allowing for higher signal frequencies and improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conductor spacing is reduced to increase circuit density, then device integration density is improved, but parasitic capacitance between conductors increases
Solution Approach 1:
The patent introduces an air gap as an intermediary dielectric material between adjacent conductors. This air gap acts as a mediator that reduces the parasitic capacitance coupling between conductors while allowing them to remain in close proximity for high-density integration. The air gap has significantly lower dielectric constant than traditional dielectric materials, thereby reducing capacitive coupling.
Solution Approach 2:
The patent changes the dielectric parameter (dielectric constant) of the material between conductors from traditional high-k dielectric materials to air (k≈1). This parameter change fundamentally reduces the parasitic capacitance between conductors, allowing for reduced spacing without proportionally increasing capacitance.
2Quantity of substance
If conductor spacing is reduced to increase circuit density, then device integration density is improved, but signal crosstalk between adjacent conductors increases
Solution Approach 1:
The air gap serves as an intermediary that electrically isolates adjacent conductors, reducing electromagnetic coupling and signal crosstalk. By introducing this low-dielectric-constant medium between conductors, the patent minimizes capacitive coupling that causes crosstalk while maintaining physical proximity for dense routing.
3Speed
If air gap is created between conductors to reduce parasitic capacitance, then signal frequency performance is improved, but structural stability and support becomes challenging
Solution Approach 1:
The patent employs thin film dielectric layers that conformally coat the conductor surfaces and bridge across the air gap. These thin films provide mechanical support and structural stability to the air gap region, preventing collapse while maintaining the electrical isolation benefits. The self-supporting nature of these films allows the air gap to be maintained without additional structural reinforcement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces parasitic capacitance and signal crosstalk, enabling higher signal frequencies and improved performance in semiconductor devices by creating an air gap inter-level dielectric structure between conductors.
Implementation Method 1
increased parasitic capacitance impacting the speed and power of integrated circuits
Implementation Method 2
encapsulating it with a self-supporting film, such as graphene, to reduce parasitic capacitance and crosstalk
Data Source
AI summary
A semiconductor device and a method for making the semiconductor device are provided. The method of making the semiconductor device may include patterning a layer for a first conductor and a second conductor, plating patterned portions of the layer to form the first conductor and the second conductor, removing patterned material to form an air gap between the first conductor and the second conductor, applying a self-supporting film on top of the first conductor and the second conductor to enclose the air gap, and reacting the self-supporting film causing the self-supporting film to be substantially non-conductive.