Al2O3 Covering Layer for Semiconductor Light Emitting Element Moisture Protection
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Solution Overview
Problem
Semiconductor light emitting elements, particularly those emitting deep ultraviolet light, face challenges in reliability due to moisture sensitivity and electrode coverage issues, which affect their performance and longevity.
Innovation Solution
The use of aluminum oxide (Al2O3) covering layers to protect the n-type and p-type semiconductor layers and contact electrodes, combined with a secondary covering layer to enhance protection and coverage, along with a protective insulation layer of silicon oxide or silicon oxynitride, addresses the moisture sensitivity and improves the reliability of the semiconductor light emitting elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective insulation film is provided on the n-side electrode and p-side electrode, then the electrodes are protected, but the semiconductor layers remain exposed and susceptible to moisture
Solution Approach 1:
The patent implements a nested covering structure where the first covering layer (aluminum oxide) is placed directly on the semiconductor layers, and the second covering layer is placed over the first covering layer. This nested arrangement ensures that the semiconductor layers are fully enclosed and protected from moisture, while the electrodes extend through both covering layers to maintain electrical contact.
Solution Approach 2:
The protective covering is divided into two distinct layers: the first covering layer made of aluminum oxide that provides primary moisture barrier protection, and the second covering layer that provides additional protection and structural support. This segmentation allows each layer to perform its specific function optimally while working together to solve the moisture sensitivity problem.
2Reliability
If the surface of the light emitting element is covered more suitably, then moisture resistance is improved, but the device structure becomes more complex
Solution Approach 1:
The first covering layer made of aluminum oxide serves multiple functions: it acts as a moisture barrier, provides mechanical protection to the semiconductor layers, and serves as a base layer for the second covering layer. This multi-functionality reduces the need for additional separate protective components, thereby limiting the increase in device complexity.
3Reliability
If aluminum oxide covering layers are used to protect semiconductor layers and electrodes, then moisture resistance is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The patent specifies particular material properties and structural parameters for the covering layers, including using aluminum oxide with specific characteristics and defining the sequential arrangement of layers. By establishing clear parameter specifications, the patent enables standardized manufacturing processes that can achieve the required precision consistently.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of Al2O3 covering layers and a secondary covering layer significantly enhances the moisture resistance and reliability of the semiconductor light emitting elements, ensuring effective coverage of semiconductor layers and contact electrodes, thereby improving their performance and longevity.
Implementation Method 1
the n-type semiconductor layer, the active layer, and the p-type semiconductor layer made of an AlGaN-based semiconductor material are covered by aluminum oxide (Al2O3), which has an excellent moisture resistance
Implementation Method 2
a first covering layer that is provided to cover a second region on the n-type semiconductor layer different from the first region, a side of the active layer, and the p-type semiconductor layer and that is made of aluminum oxide (Al2O3)
Implementation Method 3
a second covering layer provided to cover the first covering layer, the n-side contact electrode, and the p-side contact electrode
Implementation Method 4
a protective insulation layer that is provided between the p-type semiconductor layer and the first covering layer and that is made of silicon oxide (SiO2) or silicon oxynitride (SiON)
Data Source
AI summary
A semiconductor light emitting element includes: an n-type semiconductor layer; an active layer provided in a first region on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a first covering layer that is provided to cover a second region on the n-type semiconductor layer different from the first region, a side of the active layer, and the p-type semiconductor layer and that is made of aluminum oxide (Al2O3); an n-side contact electrode that extends through the first covering layer and is in contact with the n-type semiconductor layer; a p-side contact electrode that extends through the first covering layer and is in contact with the p-type semiconductor layer; and a second covering layer provided to cover the first covering layer, the n-side contact electrode, and the p-side contact electrode.