Semiconductor Devices TRIZ Cases

A group-III nitride semiconductor device offsets internal strain through specific crystallographic growth orientation and layer configuration.

Protection rings surrounding multiplication layers prevent delayed signals from particles passing between pads, improving timing accuracy.

Reducing the AlN rocking curve FWMH below 1500 seconds increases compressive stress to counterbalance GaN tensile forces, limiting substrate warp magnitude.

A trench gate semiconductor device uses intersecting second trenches to ensure complete polysilicon filling within the first trenches.

Oblique potting surface refracts electromagnetic radiation, eliminating additional optical elements to reduce device complexity and manufacturing costs.

A lateral-diffused metal oxide semiconductor device incorporates a segmented dopant region between the gate and drain to form specific PN-junctions.

Extending the doped region depth below the isolation boundary reduces parasitic capacitance loss while maintaining standard manufacturing precision.

Encapsulated air-gap spacers lower dielectric constants to reduce parasitic capacitance and RC time delays in non-planar transistors.

Sputtering transparent electrodes in a nitrogen atmosphere fills nitrogen vacancies in p-type nitride layers, preventing electrode characteristic deterioration.

Lowering red phosphor concentration at the LED package edge prevents excessive red light generation, eliminating the yellow halo defect.

A SiGe heterojunction bipolar transistor uses biaxial and uniaxial strain to reduce carrier transmission time.

A shallow rectangular reflective cup filled with clear encapsulant redirects light from a conformally coated LED die.

A vertical bidirectional insulated gate turn-off device integrates mirror-image structures on both sides of a substrate to enable independent gate control.

Segmented isolation structures allow partial current flow, increasing on-current while maintaining voltage resistance in LDMOS devices.

A planar extended drain transistor uses a buried control gate to create parallel current paths and lower channel resistance.

A photodetector uses surface plasmon resonance in a nanostructure to change electrical conductivity for light detection.

A support layer reinforces the epitaxial structure of a micro light-emitting diode to maintain robust electrical connections.

A power semiconductor device uses a buffer layer with higher impurity concentration to optimize electrical field strength across the substrate.

An insulating layer on the outer peripheral surface of a semiconductor light emitting device enhances electrode adhesion and directs applied current.

Integrated light-concentrating structure reduces image sensor thickness by merging optical functions with interconnection layers.

A semiconductor light emitting device uses a fine concave-convex pattern structure to enhance external quantum efficiency.

Oppositely doped gate extending portions reduce drain-to-gate capacitance, preventing power loss and component damage in high-voltage switching.

Curving the optoelectronic chip surface overcomes limited decoupling efficiency by directing radiation into a specific solid angle.

Lattice mismatch strain in III-V layers overcomes silicon bandgap limits, enabling 850 nm photodetection.

Incorporating molybdenum into amorphous oxide active layers boosts field-effect mobility while stabilizing resistivity against atmospheric exposure.

A vertical semiconductor device incorporates a field-strength-dependent resistive layer in the trench to protect the gate oxide.

Segmenting the gate into a foot and body allows precise channel width definition, resolving manufacturing precision limits in transistor fabrication.

A semiconductor device embeds a gate electrode in a trench over the separation insulating film to modulate the electric field distribution.

Segmented parallel diodes with distinct breakdown voltages optimize electric field distribution to increase current capacity and reduce on-resistance.

A semiconductor light emitting element uses tensile strain in the first layer to optimize InGaN well layer thickness and composition.

An SiO2-B2O3 glass member disperses inorganic phosphors to convert wavelengths while maintaining structural integrity.

Integrated doped regions reduce ringing from package inductance while maintaining low leakage current for reliable high-speed switching.

Inverse metal-assisted chemical etching forms textured surfaces that reduce ion-induced damage and enhance light absorption in optoelectronic devices.

A notched gate structure in power MOS transistors creates low resistivity paths for secondary charge carriers.

Stressor-filled contact trenches transfer mechanical force into fin channels, maintaining vertical strain to improve carrier mobility and drive current.

An embedded source field plate relaxes electric field concentration on gate electrodes while reducing parasitic capacitance in nitride semiconductor devices.

Annular deep trenches electrically isolate transistor regions on a shared substrate, preventing lithographic defects from surface steps during epitaxial growth.

A semiconductor device structure with a non-uniform p-type base region impurity concentration.

A semiconductor light emitting element uses aluminum oxide covering layers to protect contact electrodes and active regions from environmental exposure.

Forming a short channel region via thermal diffusion increases saturation current while maintaining off-state breakdown voltage.

A nitride semiconductor high power device uses an alternating InGaN and GaN multiple quantum well layer to form a channel.

A FinFET fabrication method uses a mask layer to expose specific fin regions while protecting top surfaces during stress layer formation.

Trenches in the substrate scatter light to improve uniformity without complex patterned package substrates.

A semiconductor structure attaches to a carrier using underfill material that supports the device during growth substrate removal.

An insulating film mediates the gate electrode to stabilize threshold voltage against manufacturing variations while reducing gate leak current.

An AlxInyGa1-x-yN stress control layer sits between the light emitting and p-type carrier blocking layers in nitride semiconductor structures.

Segmented doped regions in a silicon carbide device shield the gate dielectric, reducing electric fields and on-resistance while improving voltage blocking.

Deliberately introduced crystal defects in the protective layer dissipate electrostatic discharge pulses, maintaining radiation output.

Asymmetric segmented trench structures compensate internal stress to eliminate wafer bowing while maintaining high voltage blocking capability.