Micro LED Support Layer for Electrode Stability

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Solution Overview

Problem

Conventional micro LEDs are prone to electrode separation due to the thinness of the N-type ohmic contact layer, leading to potential fracture and disconnection of electrodes.

Innovation Solution

The proposed solution involves an epitaxial layered structure with a support layer, a first-type semiconductor element, and a second-type semiconductor element, where the first electrode is connected to the first-type semiconductor element and the second electrode is connected to the second-type semiconductor element, with the support layer providing strength to prevent fracture and improve electrode stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If the N-type ohmic contact layer is made thin to reduce absorption, then the light extraction efficiency is improved, but the layer becomes more liable to fracture causing electrode separation

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidelectrode connection stability
Core Design Contradiction:
Illumination intensityVSReliability

Solution Approach 1:

The patent introduces a support layer as an intermediary element between the substrate and the thin N-type ohmic contact layer. This support layer provides mechanical strength and structural stability to the fragile thin contact layer, preventing fracture and electrode separation while allowing the contact layer to remain thin for improved light extraction efficiency.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent creates a composite structure combining the support layer with the thin N-type ohmic contact layer. This composite construction integrates the mechanical strength of the support layer with the optical properties of the thin contact layer, achieving both structural reliability and high light extraction efficiency simultaneously.

Inventive Principle:
Principle #40Composite materials

2Loss of energy

If the N-type ohmic contact layer thickness is reduced to improve optical performance, then light absorption is reduced, but the mechanical strength decreases leading to potential fracture

Engineering Contradiction:
Improvelight absorption lossVSAvoidcontact layer mechanical strength
Core Design Contradiction:
Loss of energyVSStrength

Solution Approach 1:

The support layer serves as a mediator that compensates for the mechanical strength deficiency of the thin N-type ohmic contact layer. It provides the necessary structural support to prevent fracture while allowing the contact layer to maintain its thin profile for reduced light absorption.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent segments the structural support function from the electrical contact function. The support layer handles mechanical strength requirements, while the thin N-type ohmic contact layer handles electrical conduction and light extraction, allowing each layer to be optimized independently for its specific function.

Inventive Principle:
Principle #1Segmentation

3Productivity

If a thin N-type ohmic contact layer is used to improve light extraction, then optical efficiency increases, but electrode stability deteriorates

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidelectrode stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The support layer acts as an intermediary that stabilizes the thin N-type ohmic contact layer, preventing electrode separation and maintaining electrical connection stability while allowing the contact layer to remain thin for high light extraction efficiency.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The composite structure of support layer plus thin N-type ohmic contact layer enables simultaneous achievement of high productivity (light extraction efficiency) and high reliability (electrode stability), as each layer contributes its optimal properties to the overall device performance.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS11417801B2Light-emitting diode and method for manufacturing the same
Publication Date: 2022.08.16 XIAMEN SANAN OPTOELECTRONICS CO LTD
  • US11417801B2 patent drawing
  • US11417801B2 patent drawing
  • US11417801B2 patent drawing

AI summary

A micro light-emitting diode (LED) includes an epitaxial layered structure including a support layer, a first-type semiconductor element, an active layer, and a second-type semiconductor element that are sequentially disposed on one another in such order. A method for manufacturing a micro LED device including at least one of the micro LED is also disclosed.