Semiconductor Light Emitting Device With Concave-Convex Pattern
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Solution Overview
Problem
Current semiconductor light emitting devices face challenges in enhancing light efficiency and resistance against electrostatic discharge (ESD) due to limitations in manufacturing processes and surface patterns, which affect the performance and longevity of active layers.
Innovation Solution
The development of a semiconductor light emitting device with a concave-convex pattern structure on the substrate, featuring a first and second concave-convex pattern, a conductive semiconductor layer, and an active layer, which improves light extraction efficiency and resistance against ESD by forming a fine concave-convex structure on the surface, reducing the critical angle of light and enhancing external quantum efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a flat substrate surface is used, then the manufacturing process is simple, but light extraction efficiency is low
Solution Approach 1:
The patent applies curvature by forming convex patterns on the substrate surface instead of using a flat surface. These convex patterns have curved surfaces that improve light extraction efficiency by reducing total internal reflection and enhancing light emission in multiple directions, thereby resolving the contradiction between manufacturing simplicity and light extraction performance.
Solution Approach 2:
The patent transitions from a two-dimensional flat surface to a three-dimensional surface with convex patterns. This dimensional change introduces surface relief structures that manipulate light propagation paths, improving light extraction efficiency while maintaining manufacturing feasibility through established semiconductor fabrication techniques.
2Device complexity
If a single-layer conductive semiconductor layer is used, then the device structure is simple, but resistance against electrostatic discharge is insufficient
Solution Approach 1:
The patent segments the single conductive semiconductor layer into multiple layers with different conductivity types (n-type and p-type). This segmentation creates a multi-layer structure that provides better electrostatic discharge protection by distributing electrical stress across multiple interfaces and layers, while maintaining reasonable device complexity through systematic layering.
Solution Approach 2:
The patent uses composite material structure by combining different semiconductor materials with varying conductivity types in a multi-layer configuration. This composite approach enhances electrostatic discharge resistance by leveraging the complementary properties of different semiconductor layers, creating a more robust structure against electrical stress.
3Stability of the object's composition
If the active layer is exposed on a single crystal surface, then the growth is uniform, but the active layer is vulnerable to degradation
Solution Approach 1:
The patent uses convex patterns with curved surfaces to cover and protect the active layer. These curved surface structures provide mechanical protection and environmental shielding while maintaining the underlying crystal growth uniformity, thereby protecting the active layer from degradation without compromising growth quality.
Solution Approach 2:
The patent implements protective structures beforehand to shield the active layer from potential degradation factors. The convex patterns and multi-layer conductive structures are formed prior to final device operation, providing preemptive protection against environmental stressors, mechanical damage, and electrical stress, thus preventing active layer degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively enhances light efficiency and resistance against electrostatic discharge, improving the overall performance and longevity of the semiconductor light emitting device by optimizing the surface pattern and structure, thereby improving external quantum efficiency and preventing active layer degradation.
Implementation Method 1
forming a fine concave-convex structure on the surface of the concave and/or convex pattern... reducing the critical angle of light and enhancing external quantum efficiency
Implementation Method 2
forming a fine concave-convex structure on the surface of the concave and/or convex pattern... enhancing external quantum efficiency
Data Source
AI summary
Disclosed is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a first concave-convex pattern, a second concave-convex pattern on at least one pattern of the first concave-convex pattern, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.