Nitrogen Atmosphere Sputtering for Semiconductor Light Emitting Device Electrodes
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for manufacturing semiconductor light emitting devices face challenges in maintaining superior crystallinity and electrical conductivity of transparent electrodes, leading to degraded device characteristics due to nitrogen vacancy generation during the sputtering process.
Innovation Solution
A method involving the formation of a nitrogen gas atmosphere during the sputtering process to fill nitrogen vacancies in the p-type nitride semiconductor layer, followed by the formation of transparent electrodes using a transparent conductive oxide, and the use of aluminum (Al) for n-type and p-type electrodes to improve electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a transparent electrode is formed on a light emitting structure through conventional sputtering process, then the electrode can be manufactured, but nitrogen vacancies are generated in the p-type nitride semiconductor layer causing deterioration of electrode characteristics
Solution Approach 1:
A nitrogen-containing layer is formed on the light emitting structure before the transparent electrode formation process. This preliminary action ensures that nitrogen is available to fill vacancies during subsequent processing, preventing nitrogen vacancy generation and maintaining electrode characteristics without requiring process changes later
Solution Approach 2:
A nitrogen-containing intermediate layer is introduced between the light emitting structure and the transparent electrode. This intermediary layer serves as a nitrogen source that supplies nitrogen during the electrode formation process, preventing nitrogen vacancies while allowing the transparent electrode to be formed with good characteristics
2Device complexity
If conventional sputtering process is used to form transparent electrode, then manufacturing process is simple, but crystallinity of the electrode is deteriorated leading to reduced electrical conductivity and translucency
Solution Approach 1:
The nitrogen-containing layer is prepared in advance before the sputtering process. This preliminary preparation ensures that nitrogen is available during electrode formation, maintaining crystallinity without adding complex in-situ nitrogen supply mechanisms during sputtering
Solution Approach 2:
The formation of nitrogen-containing layer modifies the chemical environment parameters of the substrate surface before electrode deposition. This parameter change (increased nitrogen availability) allows the sputtering process to proceed with standard parameters while achieving better crystallinity due to reduced nitrogen vacancies
3Productivity
If nitrogen vacancies are not filled during sputtering, then processing is faster, but device characteristics are significantly degraded
Solution Approach 1:
Nitrogen is supplied in advance through the pre-formed nitrogen-containing layer, eliminating the need for slow in-situ nitrogen supply during sputtering. This allows fast processing while ensuring nitrogen vacancies are filled, maintaining device characteristics
Solution Approach 2:
The nitrogen-containing layer acts as a self-supplying nitrogen reservoir during the sputtering process. As the transparent electrode is formed, nitrogen automatically diffuses from the nitrogen-containing layer to fill vacancies, providing self-service nitrogen supply without external intervention or process delays
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes the deterioration of electrode characteristics, enhances electrical functionality, and reduces processing costs by using Al electrodes, while maintaining superior electrical performance.
Implementation Method 1
forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process
Implementation Method 2
forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process
Data Source
Figure 1~3
Figure 4~5
Figure 6~8
AI summary
There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer (102), an active layer (103), and a p-type nitride semiconductor layer (104) on a substrate (101); forming a transparent electrode (105) on the p-type nitride semiconductor layer (104) through a sputtering process; and forming a nitrogen gas (206) atmosphere in an interior of a reaction chamber (200) in which the sputtering process is performed, prior to or during the sputtering process. In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode having significantly improved electrical characteristics.