ALD Chamber Bias Switching for Uniform High-Aspect-Ratio Coating
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Solution Overview
Problem
Atomic layer deposition (ALD) technologies face challenges in achieving both high growth rate and uniformity of thin films on high aspect ratio structures, as existing methods either lack efficiency in the vertical direction or compromise uniformity.
Innovation Solution
An ALD apparatus with a chamber, platform, shower head, bias power supply, and dual injection devices that inject precursors along perpendicular directions, utilizing a bias power supply to enhance precursor delivery and inert gases for purging, ensuring efficient and uniform film deposition in high aspect ratio structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If precursors are injected along the horizontal direction in ALD, then uniform thin film thickness is achieved, but growth rate in the vertical direction is insufficient
Solution Approach 1:
The patent introduces a second precursor injection direction perpendicular to the first direction, transforming the single-direction injection into multi-directional injection. This dimensional change allows precursors to reach high aspect ratio structures from multiple angles, simultaneously achieving uniform film thickness and improved vertical growth rate
2Productivity
If precursors are injected in the vertical direction to increase growth rate, then vertical growth rate is improved, but film thickness uniformity deteriorates
Solution Approach 1:
By adding a perpendicular injection direction to the vertical precursor delivery, the system compensates for the non-uniformity caused by vertical injection alone. The combined multi-directional approach maintains high vertical growth rate while restoring film uniformity through geometric coverage
3Reliability
If bias power supply is continuously on, then precursor attraction is enhanced, but energy consumption increases and precursor purity may deteriorate
Solution Approach 1:
The bias power supply operates periodically - turned on during precursor injection to enhance attraction and turned off during inert gas purging to reduce energy consumption. This periodic operation maintains high precursor delivery efficiency while minimizing energy waste and preventing contamination
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves both the growth rate and uniformity of thin films in high aspect ratio structures by alternating precursor injections along vertical and horizontal directions, with the bias power supply aiding in precursor attraction and purging, resulting in conformal and uniform thin film coatings.
Implementation Method 1
the bias power supply is turned on... aiding in precursor attraction
Implementation Method 2
inject a first precursor or a first inert gas into the chamber along a first direction through the shower head
Implementation Method 3
the first injection device injects the first inert gas into the chamber... and the bias power supply is turned off
Data Source
AI summary
An atomic layer deposition apparatus including a chamber, a platform, a shower head, a bias power supply, a first injection device, and a second injection device is provided. The platform and the shower head are disposed in the chamber, and the platform is configured to carry a substrate having a high aspect ratio structure. The bias power supply is coupled to the platform. The first injection device and the second injection device are connected to the chamber; the first injection device injects a first precursor or a first inert gas into the chamber along a first direction through the shower head, and the second injection device injects a second precursor or a second inert gas into the chamber along a second direction perpendicular to the first direction. When the first precursor or the second precursor is injected into the chamber, the bias power supply is turned on. When the first inert gas or the second inert gas is injected into the chamber, the bias power supply is turned off.