Electric Discharge Tubes TRIZ Cases

A plate-and-liner process kit splits chamber gas zones to improve deposition uniformity and cleaning under low flow and high-pressure conditions.

Guard and ground electrodes confine the sensing field for directional capacitance measurement while suppressing ESD at the amplifier.

Electric and magnetic field control aligns charged particle beamlets with a deflector array, reducing blockage and drift during collimation.

Pre-measured linear error correction keeps wafer table temperature detection accurate across wide refrigerant ranges, improving plasma processing yield.

A combined plasma preclean and epitaxy chamber removes oxide under vacuum, cutting substrate handling time and ambient exposure.

AC power coupled through the heater and plasma electrode reveals poor substrate fixation, enabling reliable high-temperature process uniformity.

A two-step DLC deposition and etch sequence removes overhangs and fully fills hardmask openings while improving etch selectivity.

Alternating silicon precursors in PEALD improves conformal low-k silicon oxide deposition in recess structures while reducing RC delay.

Dual-resonance initial and main ICP coil modules sustain stable atmospheric plasma while limiting dielectric tube thermal damage.

RF-bias plasma deposition and annealed metal doping create a diamond-like carbon hardmask with high etch selectivity, modulus, and lower stress.

Cryogenic FIB-SEM sample prep preserves photoresist geometry during TEM lamella formation, reducing thermal shrinkage and metrology error.

Concave gradient surfaces and patterned openings improve gas and plasma uniformity in deposition chambers, boosting film quality and power efficiency.

Pulsed fluorocarbon plasma alternates bottom deposition and radical trimming to limit sidewall buildup in high-aspect-ratio features.

Using an unused end effector for substrate moves while edge rings are handled cuts transfer delays and improves vacuum chamber throughput.

Annular thermal voids and multiple heated zones create stronger center-to-edge wafer temperature gradients for more uniform ALD and CVD deposition.

A replaceable housing cover integrates the gear stage, generator, and rotary coupling to simplify sputtering magnet maintenance and improve reliability.

A flow-directing structure, baffle, and tray capture curing residues before they drip onto wafers, reducing contamination defects.

Optical interferometry and reflected spectra enable real-time etch compensation, improving wafer uniformity and catching chamber instability early.

Compresses RF path sensor signals into key values like peak-to-peak, frequency, and phase to cut controller load and storage needs.

Smaller edge through holes suppress sheath-layer-driven arcing in plasma shower heads, extending life and reducing downtime.

Two anode electrodes shape the field so off-axis electron beams pass the differential exhaust diaphragm and more of the photocathode can be used.

Multiple double Langmuir probes at fixed voltages avoid sweep-rate limits and enable high time-resolution plasma density and temperature measurement.

Forward and reverse sliding spreads bonding material across the backing plate, increasing bond coverage and limiting defects that cause peeling.

One RF source is switched between pedestal electrodes and inductive coils to run substrate plasma processes and chamber cleaning with less hardware.

A deposition-etch-ashing sequence suppresses RIE-lag, enabling uniform-depth, high-aspect silicon recesses across different opening sizes.

A hybrid coil and Faraday shield layout reduces impedance swings, parasitic losses, and plasma instability in ICP substrate processing.

Phase tuning across multiple radiators reshapes the dielectric-window field to control localized plasma and keep substrate processing uniform.

A piezoelectric expansion member narrows the electrostatic chuck pin hole during RF processing to block gas and plasma entry and limit discharge damage.

Stable spacing between the discharge chamber and conductive connectors prevents ion source breakdown and lowers production cost.

A refractory metal arc chamber with a graphite slit member enables stable, high-purity multiply charged ions while limiting contamination and discharge damage.

Flexible radial feed pins and sockets keep edge ring bias contact stable, improving plasma processing consistency.

Magnetically isolated power loops feed each switch independently, enabling faster impedance matching and lower reflected power in plasma RF networks.

A porous body partly filling stepped gas-hole recesses in an electrostatic chuck suppresses abnormal discharge while preserving wafer cooling.

Repeated silicon and oxygen precursor cycles with hydroxylation close seams in high-aspect-ratio semiconductor features for more reliable fill.

Matrix heaters sense plasma non-uniformity from resistance and temperature changes, enabling real-time compensation during substrate processing.

Ferromagnetic focusing members reshape peripheral magnetic force to improve plasma density uniformity and substrate processing precision.

Adjusting plasma direction from focus ring thickness helps keep wafer-edge plasma uniform and etching profiles consistent across the wafer.

A gas-phase modification and liquid-phase dissolution sequence in one chamber cuts purge time while preserving precise, smooth atomic layer etching.

Separate bias electrodes for the substrate and edge ring improve bias uniformity and plasma processing efficiency in the support structure.

A synchronized frequency-hopping pattern mitigates bias-induced IMD, cutting reflected power while keeping plasma RF power delivery stable.

Using multiple RF tones instead of one frequency avoids plasma frequency cliffs, improving ignition stability and power delivery as conditions shift.

Interlocking convex and concave chamber features replace screws to avoid fastener damage, corrosion, and complex wafer chamber assembly.

Catalyst-mediated cyclic vapor deposition enables selective oxide growth on target surfaces while protecting sensitive areas from oxygen precursor damage.

Distributed support points and a gap controller reduce plate sag, keeping the lid-to-plate gap uniform for more consistent substrate processing.

A multilayer boron nitride wafer support uses a plasma-resistant protective layer to cut particle generation and improve durability.

Waste tungsten hexafluoride is reacted with silicon in a vent-path chamber to form reusable solid tungsten compounds and cut hazardous gas emissions.

Independent biasing of center and outer electrodes shifts local electric fields to tune radial plasma density and improve processing uniformity.

Cryogenic HF-containing plasma etching improves profile uniformity in high-aspect-ratio silicon-oxygen features while limiting bowing and etch slowdown.

A vacuum-isolated detector and electron-transparent membrane enable high-resolution x-ray analysis of wet or insulating samples in air.

A recessed cooling plate and pusher arm improve hot wafer transfer in lock chambers, reducing damage, corrosion, and transport delays.

A chamber-wall coating stabilizes polysilicon etching, reducing wafer-to-wafer gate profile variation in metal gate FinFETs.

UV and IR plasma emission monitoring helps detect instability and deposition risk in microwave reactors without intrusive internal sensors.

A coupled e-beam and RF plasma source narrows ion energy distribution to improve etch profiles while reducing charge damage in wafer processing.

Preloaded cables compress the showerhead faceplate to limit thermal droop, preserve flatness, and improve gas distribution uniformity.

Real-time light sensing adjusts zoned cleaning gas flow in semiconductor chambers to improve end-point accuracy, uniformity, and component protection.

A ring-shaped magnet above the electrostatic chuck reshapes plasma density to improve etch uniformity across the substrate.

Edge-strong horizontal magnetic fields improve in-plane uniformity in selective plasma etching of silicon regions while protecting metal regions.

A pre-nitriding step sets nitride thickness inside recessed features so oxidation yields the target oxide profile with low thermal history.

Angle-limiting shielding and magnetic electron filtering keep the anode conductive, reducing arcing and improving thin-film uniformity.

A deformable liquid or solid heat transfer layer improves substrate and edge ring temperature uniformity during high-heat plasma processing.

Periodic shifting of the plasma generation region around a shielding plate controls ion and radical balance for precise anisotropic and isotropic etching.

Sequential catalyst, hydrogen radical, and silanol precursor supply improves silicon oxide film thickness uniformity without oxidizing metal films.

Multiple plasma pulses in each ALD cycle suppress top overhangs and enable void-free bottom-up gap filling in high-aspect-ratio structures.

A staged plasma sequence deposits film on chamber walls while stripping the sample table to suppress transport-system contamination.

Optical reflectometry through a transparent crystal tracks chamber liner and process film buildup in real time, avoiding RF and thermal noise.

A stepped plug interface keeps adhesive out of the gas outlet port, preventing dielectric breakdown while maintaining stable gas flow.

A guided pin housing and height adjustment member keep plasma lift pins aligned with chuck openings to prevent friction, shear, and wear.

Staged warm and cryogenic plasma etching suppresses sidewall shoulder formation and bowing while reaching recess depth efficiently.

Sealed drift-tube bundles with Vernier cathodes enable 3D muon tracking in boreholes while resisting high pressure and water exposure.

Heat-exchange channels and embedded electrodes help a low-temperature wafer chuck maintain uniform plasma processing while limiting thermal damage.

Configurable kick pulses and Hall-effect magnetron sputtering coat LINAC bellows to reduce multipactoring and simplify RF power coupling.

A camera-aligned reflective beam measures substrate reflectance in a mask-free alignment region for more accurate etch endpoint detection.

Perpendicular precursor injection and timed bias switching improve ALD film uniformity and vertical growth in high-aspect-ratio structures.

Localized purge outlets in an offset-aperture choke plate improve temperature uniformity and cut contamination in substrate processing.

C-shaped resonators in a dielectric window let microwaves propagate at cutoff density, enabling wider high-density plasma generation.

A dielectric cover with gas conduits shields the electrostatic chuck from plasma erosion while preserving clamping and substrate cooling.

Pre-doped metal sputter targets form silicide or germanide contact regions that limit dopant loss and lower source/drain contact resistance.

Optical reflectometry on a chamber liner reflector tracks deposited films and process state in real time, improving cleaning timing and uniformity.

Imaginary impedance, reflected RF power, and arc count reveal wafer de-chucking early enough to stop plasma and prevent wafer and hardware damage.

Sequential halogen, hydrocarbon, and oxygen plasma cleaning removes mixed chamber residues, suppressing particles and improving reproducibility.

Ultrathin conformal coatings create a grounded dissipative path on semiconductor robot end effectors to limit charge buildup, arcing, and defects.

A tunable reactive impedance on the electrostatic shield shifts plasma potential to balance ion energy, uniformity, and isotropic etching.

An integrated pedestal edge ring and resistive electrode coating suppress arcing in PECVD, improving film uniformity and reducing edge damage.

A Coanda-effect cooling plate spreads gas across the plasma chamber window while reducing coverage that can distort electromagnetic transmission.

Light interference and standing-wave patterns are extracted from electron microscope images to recover sample height, angle, and material data.

A heated liner with a vertically wound magnetic coil shapes plasma and keeps liner temperature uniform to prevent particle deposition in semiconductor processing.

Alternating electron and ion incidence desorbs a treatment layer with tighter energy control, reducing etch damage and electrical changes.

A rotating platen disk replaces electrostatic beam scanning to cut angular spread and enable variable-angle ion implantation of multiple workpieces.

Dynamic perturbation frequency selection avoids RF tone interference, improving impedance matching and reflected power control in plasma RF generators.

A movable vacuum replacement chamber swaps semiconductor consumable parts without atmospheric exposure, cutting stop time and floor space.

A plasma-enhanced cyclic process uses SiH3Br or SiH3I precursors to deposit conformal silicon nitride at lower temperatures with less voiding.

Non-contact electron beam scans of patterned memory access lines reveal shorts and leakage before full fabrication, cutting test delay and cost.

A variable-index microwave window reshapes the ECR beam to keep plasma uniform while supporting faster wafer processing.

Voltage and current sensing with frequency-domain RF analysis helps stabilize power delivery, reduce reflections, and keep wafer etch and deposition rates uniform.

A multilayer flexible tube and external degasser cut gas permeation into charged particle vacuum chambers, reducing pump-down time.

Wavy signal wires and integrated mechanical-electrical bonding keep wearable sensing modules connected during body motion.

Dual negative potentials enable shutterless in-situ wafer etching and deposition in one chamber, reducing contamination, maintenance, and throughput loss.