Selective Oxide Deposition Using Catalytic Surface Passivation
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving selective deposition of oxide materials on semiconductor substrates, particularly in avoiding damage to sensitive surfaces and maintaining sufficient reactivity for deposition.
Innovation Solution
A method and assembly for selectively depositing oxide materials on a semiconductor substrate using a cyclic vapor deposition process, involving the use of a first precursor and an oxygen precursor in a reaction chamber, with optional catalysts and passivation layers to enhance selectivity and prevent damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If reactive oxygen precursors are used to maintain sufficient reactivity for deposition, then deposition rate is improved, but selectivity deteriorates due to damage to exposed sensitive surfaces
Solution Approach 1:
A catalyst layer is introduced as an intermediary between the oxygen precursor and the sensitive surfaces. The catalyst selectively promotes oxygen precursor decomposition and oxide deposition on desired surfaces while protecting sensitive surfaces from direct exposure to reactive oxygen species, thereby enabling high deposition rates without surface damage
Solution Approach 2:
The catalyst is selectively deposited only on specific surfaces where oxide deposition is desired, creating local differences in surface properties. This selective catalysis enables the oxygen precursor to react only on targeted surfaces, achieving both high deposition rate and selectivity without damaging sensitive areas
2Object-affected harmful factors
If conventional patterning methods are used to deposit different materials, then material selectivity is improved, but process complexity increases
Solution Approach 1:
The patent extracts the selectivity function from the patterning process itself and transfers it to the deposition process through catalyst-mediated selective reaction. By removing the need for separate patterning steps and achieving material selectivity directly during deposition, the overall process complexity is reduced while maintaining high selectivity
3Object-affected harmful factors
If softer selective deposition processes are used to prevent surface damage, then surface protection is improved, but deposition reactivity deteriorates
Solution Approach 1:
The catalyst acts as a mediator that enables soft selective deposition by providing an alternative reaction pathway. The oxygen precursor decomposes on the catalyst surface at lower temperatures with reduced radical formation, protecting sensitive surfaces while maintaining adequate deposition reactivity through the catalytic mechanism
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves selective deposition of oxide materials with high selectivity (>50%) and controlled growth rates, minimizing damage to sensitive surfaces and allowing for the deposition of thin, uniform oxide layers suitable for advanced semiconductor devices.
Implementation Method 1
cyclic chemical vapor deposition (cyclic CVD) and atomic layer deposition (ALD) may be used to grow oxide materials on semiconductor substrates
Implementation Method 2
an oxygen precursor comprising a hydroxyl group is provided in the reaction chamber in vapor phase to form an oxide material layer on the first surface
Data Source
AI summary
The disclosure relates to methods of selectively depositing an oxide material layer on a first surface of a semiconductor substrate relative to a second surface of the same substrate, to semiconductor processing assemblies, as well as to oxide material layers, structures and devices comprising an oxide material layer deposited according to the current disclosure. In the method, an oxide material layer is selectively deposited using a first precursor and an oxygen precursor. The second surface may be passivated against deposition of oxide material.