Integrated Epitaxy Preclean Chamber for Oxide-Free Substrate Transfer
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Solution Overview
Problem
There is a need for an improved substrate processing system that minimizes substrate handling time and exposure to ambient environment during the cleaning of substrate surfaces prior to epitaxial deposition.
Innovation Solution
The system comprises a transfer chamber coupled to film formation and plasma oxide removal chambers, with a method involving the use of a remote plasma source, a substrate support with cooling and heating capabilities, and a load lock chamber to efficiently clean substrates using a plasma process involving NH3, HF, and radicals, followed by epitaxial film formation via vapor phase epitaxy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If pre-clean processes are carried out in stand-alone vacuum process chambers, then substrate surface cleaning is achieved, but substrate handling time increases and exposure to ambient environment increases
Solution Approach 1:
The patent combines the pre-clean chamber and epitaxial deposition chamber into a single integrated vacuum chamber. The substrate remains in the same vacuum environment throughout both processes, eliminating the need to transfer substrates between separate chambers. This merging of functions directly reduces substrate handling time and minimizes exposure to ambient environment while maintaining effective oxide removal and surface cleaning capabilities.
2Manufacturing precision
If pre-clean processes are carried out in stand-alone vacuum process chambers, then substrate surface cleaning is achieved, but exposure to ambient environment increases
Solution Approach 1:
The integrated chamber design maintains continuous vacuum conditions during both pre-cleaning and epitaxial deposition processes. By combining these previously separate operations into one vacuum environment, the substrate never breaks vacuum, thereby minimizing exposure to ambient environment and reducing contamination risks from native oxide formation and foreign contaminant deposition.
Solution Approach 2:
The patent maintains a controlled vacuum atmosphere throughout the integrated process, creating an inert environment that prevents oxidation and contamination of the substrate surface. The continuous vacuum environment acts as a protective barrier against ambient air exposure, eliminating the formation of new native oxides and preventing foreign contaminant deposition between processing steps.
3Productivity
If plasma oxide removal process is used, then oxide removal efficiency is improved, but process complexity increases
Solution Approach 1:
The patent introduces a remote plasma source as an intermediary mechanism to generate reactive species that efficiently remove oxides from the substrate surface. The remote plasma source creates a plasma environment without direct contact between the substrate and plasma generation components, enabling effective oxide removal while simplifying the overall process integration within the single chamber system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes oxides and contaminants from substrate surfaces, improving the quality of subsequently formed epitaxial layers while reducing substrate handling time and ambient exposure.
Implementation Method 1
a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a remote plasma source
Implementation Method 2
exposing the substrate to a processing gas comprising NH3, HF, and radicals
Implementation Method 3
a substrate support comprising a cooling channel and a heater
Implementation Method 4
forming a film on the substrate by a vapor phase epitaxy process
Implementation Method 5
forming a film on the substrate by a vapor phase epitaxy process
Data Source
AI summary
Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.