Hybrid Wet Atomic Layer Etching for Faster Precision Cycles
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Solution Overview
Problem
Existing atomic layer etching (ALE) techniques, particularly wet ALE, face challenges such as low throughput and high cost due to slow reaction rates and the need for purge steps between surface modification and dissolution steps.
Innovation Solution
A hybrid wet ALE process that combines a gas-phase surface modification step with a liquid-phase dissolution step, eliminating the need for purge steps and allowing for faster cycle times and improved throughput by performing both steps within the same process chamber at near atmospheric pressure and room temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If wet ALE is used to maintain self-limiting reactions and smooth post-etch surfaces, then manufacturing precision is improved, but productivity deteriorates due to slow reaction rates and long cycle times
Solution Approach 1:
The patent segments the wet ALE process into two separate chambers: a reaction chamber for surface modification and a dissolution chamber for removing the modified layer. This spatial segmentation allows each chamber to be optimized independently - the reaction chamber maintains precise control over self-limiting reactions while the dissolution chamber operates at higher throughput, thereby resolving the contradiction between etch precision and productivity
Solution Approach 2:
The patent transitions from a sequential single-chamber process to a parallel multi-chamber process, adding the dimension of spatial distribution. By distributing different process steps across multiple chambers that operate simultaneously, the system achieves both the precision of controlled reactions and the throughput of continuous processing
2Manufacturing precision
If purge steps are included between surface modification and dissolution steps to prevent gas mixing, then manufacturing precision is improved, but productivity deteriorates due to increased cycle time
Solution Approach 1:
The patent eliminates the need for purge steps by segmenting the process into separate chambers. The reaction chamber and dissolution chamber are physically isolated, allowing each to operate with its own optimized gas environment without requiring purging between steps. This spatial segmentation removes the time penalty associated with purge operations while maintaining precise control over each reaction step
Solution Approach 2:
By separating the reaction and dissolution steps into different chambers that operate continuously and simultaneously, the patent eliminates idle purge time between steps. The useful action continues uninterrupted as substrates are transferred between chambers, achieving continuous processing without compromising the control needed for precise etching
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid ALE process enhances throughput and reduces costs by minimizing cycle time, maintaining the advantages of wet ALE such as self-limiting reactions and smooth post-etch surfaces, while overcoming the limitations of conventional wet ALE.
Implementation Method 1
a gas-phase reactant is used to modify an exposed surface of a material to create a modified surface layer
Implementation Method 2
a liquid-phase reactant is used to selectively dissolve the modified surface layer without dissolving the material underlying the modified surface layer
Data Source
AI summary
The present disclosure provides a system for etching an exposed material on a substrate disposed within a process chamber using a hybrid atomic layer etching (ALE) process that combines a gas-phase surface modification step with a liquid-phase dissolution step within the same process chamber. In the hybrid ALE process disclosed herein, a gas-phase reactant is used to modify an exposed surface of the material to create a modified surface layer, and one or more liquid-phase reactants are used to selectively dissolve the modified surface layer without dissolving the material underlying the modified surface layer. Once the modified surface layer is selectively dissolved, the substrate may be dried and the gas-phase surface modification and liquid-phase dissolution steps may be repeated for one or more ALE cycles until a desired amount of the material is etched.