Substrate Support Matrix Heaters for Real-Time Plasma Uniformity Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Substrate processing systems face challenges in achieving uniform plasma distribution during semiconductor processing, leading to non-uniformities in substrate treatment.
Innovation Solution
The system employs a matrix heater with multiple heater elements arranged in a matrix, along with a controller that monitors resistances and temperature distributions to determine plasma uniformity and adjust parameters such as RF power, gas chemistry, and heater power to compensate for non-uniformities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional substrate processing systems are used, then basic processing functions are provided, but plasma non-uniformities cannot be detected or compensated in real-time
Solution Approach 1:
The heater elements in the substrate support serve dual functions: they provide thermal control for the substrate during processing and simultaneously act as sensors to detect plasma non-uniformities through resistance measurements. This eliminates the need for separate detection hardware, resolving the contradiction between measurement precision and device complexity.
Solution Approach 2:
The system uses its own existing heater elements as both actuators and sensors. The heater elements measure plasma non-uniformities by detecting changes in their resistance caused by plasma heating, and then the system automatically compensates for these non-uniformities by adjusting power distribution to individual heater elements, achieving self-diagnosis and self-correction without external intervention.
2Manufacturing precision
If plasma non-uniformities are not compensated, then processing continues at standard throughput, but substrate processing uniformity deteriorates
Solution Approach 1:
The system continuously monitors plasma non-uniformities by measuring heater element resistances during processing and uses this feedback to dynamically adjust power distribution to individual heater elements. This real-time feedback loop maintains substrate processing uniformity without requiring process interruptions or reduced throughput.
Solution Approach 2:
The system transitions from static, uniform power distribution to dynamic, spatially-resolved power control. Individual heater elements can be independently controlled based on real-time plasma conditions, allowing the system to adapt to changing plasma non-uniformities while maintaining continuous processing and high throughput.
3Temperature
If heater power is increased to improve substrate heating, then temperature control improves, but plasma non-uniformities worsen
Solution Approach 1:
The system applies different power levels to different spatial locations on the substrate by independently controlling individual heater elements. This allows localized temperature adjustment to compensate for plasma non-uniformities, achieving both improved temperature control and plasma distribution uniformity through spatially-resolved control rather than uniform heating.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables real-time, in-situ monitoring and compensation of plasma non-uniformities, improving the uniformity of substrate processing and enhancing the yield of semiconductor wafers.
Implementation Method 1
The matrix heater includes a plurality of heater elements arranged in a matrix and is configured to control a temperature of the semiconductor substrate during processing
Implementation Method 2
The RF generator is configured to supply RF power to the processing chamber to generate plasma in the processing chamber
Implementation Method 3
determine first resistances of the plurality of heater elements; determine second resistances of the plurality of heater elements
Data Source
AI summary
Systems and methods of the disclosure perform in situ sensing and real time compensation of various non-uniformities in substrate processing systems. A plasma non-uniformity is sensed by determining a temperature distribution across a matrix of a plurality of micro-heaters disposed in the substrate support. Alternatively, the plasma non-uniformity is sensed by determining heat flux through the substrate support using the matrix heaters and one or more heaters used to heat one or more zones of the substrate support. The plasma non-uniformity is compensated by adjusting one or more parameters such as power supplied to the matrix heaters, RF power supplied to generate plasma, chemistry and/or flow rate of gas or gases used to generate plasma, settings of thermal control units or chillers, and so on. Additionally, non-uniformities inherent in the substrate support are sensed using the zone and matrix heaters and are compensated by adjusting the one or more parameters.