Substrate Support Bias Layout for Uniform Plasma Processing
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in independently and efficiently supplying electric biases to substrates and edge rings, leading to uneven plasma distribution and processing performance.
Innovation Solution
The plasma processing apparatus incorporates a substrate support with a dielectric portion divided into regions for the substrate and edge ring, featuring first and second bias electrodes and power sources. The apparatus ensures that the shortest distances between the bias electrodes and the substrate/edge ring satisfy specific expressions, allowing for controlled electric bias distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single bias electrode is used for both substrate and edge ring, then device complexity is reduced, but independent bias supply capability deteriorates
Solution Approach 1:
The bias electrode is segmented into a first bias electrode for the substrate and a second bias electrode for the edge ring. This segmentation enables independent bias supply to each component while maintaining a manageable device structure through functional separation.
Solution Approach 2:
Different regions of the dielectric portion are assigned different bias electrodes based on local requirements. The first region (substrate support area) receives bias from the first bias electrode, while the second region (edge ring support area) receives bias from the second bias electrode, optimizing local plasma processing quality.
2Productivity
If bias electrodes are placed close to substrate and edge ring, then plasma processing efficiency is improved, but bias distribution uniformity deteriorates
Solution Approach 1:
The patent controls the spatial arrangement of bias electrodes in multiple dimensions. The first bias electrode is positioned at a first distance from the substrate, while the second bias electrode is positioned at a second distance from the edge ring, with the distances satisfying specific relationships to achieve uniform bias distribution while maintaining processing efficiency.
Solution Approach 2:
The patent optimizes the distances between bias electrodes and their respective targets (substrate and edge ring) by establishing specific mathematical relationships between these parameters. This parameter optimization ensures both efficient plasma processing and uniform bias distribution.
3Adaptability or versatility
If separate bias power sources are used for first and second bias electrodes, then independent bias control is improved, but device complexity increases
Solution Approach 1:
The power source system is segmented into a first bias power source for the first bias electrode and a second bias power source for the second bias electrode. This segmentation provides independent control capability while keeping each power source module relatively simple and manageable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the independent supply of electric biases to substrates and edge rings, improving plasma processing efficiency by reducing bias distribution issues and maintaining uniformity in plasma treatment.
Implementation Method 1
The at least one bias power source is configured to supply an electric bias for ion attraction to the first bias electrode and the second bias electrode
Implementation Method 2
The dielectric portion includes a first region configured to support a substrate placed thereon and a second region surrounding the first region and configured to support an edge ring placed thereon
Data Source
AI summary
In the disclosed plasma processing apparatus, the substrate support includes a base and a dielectric portion on the base. The dielectric portion includes a first region configured to support a substrate placed thereon and a second region configured to support an edge ring placed thereon. First and second bias electrodes are disposed in the first and second regions, respectively. A shortest distance dW1 between a placement position of the substrate in the first region and the first bias electrode is not larger than a shortest distance dWE between the first bias electrode and a placement position of the edge ring in the second region. A shortest distance dE1 between the second bias electrode and the placement position of the edge ring is not larger than a shortest distance dEW between the second bias electrode and the placement position of the substrate.