Microwave Window Refraction for Uniform High-Speed Wafer Processing

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Solution Overview

Problem

Previous wafer processing apparatuses based on electron cyclotron resonance (ECR) face a trade-off between process speed and uniformity, where increasing process speed often compromises uniformity, leading to non-uniform plasma distribution and potential semiconductor device failures.

Innovation Solution

A wafer processing apparatus with a microwave window having a variable refractive index, which adjusts the beam cross-section and plasma generation position, combined with a magnetic field to enhance plasma uniformity and processing speed, and a transmittance adjusting coating to optimize plasma density distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If process speed is increased in ECR-based wafer processing, then productivity is improved, but plasma uniformity deteriorates

Engineering Contradiction:
Improveprocess speedVSAvoidplasma uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The microwave window is designed with a variable refractive index that changes according to the radial distance from the optical axis. The center region has a different refractive index than the edge region, allowing different parts of the microwave beam to be focused at different positions. This creates a more uniform plasma distribution across the wafer surface even at high process speeds, resolving the contradiction between productivity and plasma uniformity.

Inventive Principle:
Principle #3Local quality

2Device complexity

If microwave beam cross-section is not controlled, then device complexity is reduced, but plasma distribution uniformity deteriorates

Engineering Contradiction:
Improvestructure simplicityVSAvoidplasma distribution uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

Instead of using complex mechanical focusing systems or adjustable components, the patent changes the optical parameter (refractive index) of the microwave window material itself. By selecting a material with a variable refractive index that varies radially from the optical axis, the system achieves beam cross-section control and plasma uniformity without adding mechanical complexity. The refractive index gradient naturally focuses the microwave beam to create a uniform plasma distribution.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution improves the uniformity and reliability of wafer processing, allowing for high-speed processing while maintaining uniformity, thereby enhancing semiconductor device manufacturing productivity and reliability.

Implementation Method 1

a refractive index of the microwave window varies according to a distance from an optical axis of the microwave window

Methodology Applied
Scientific EffectRefraction: Refraction

Implementation Method 2

a process region in which electron cyclotron resonance (ECR) plasma is generated

Methodology Applied
Scientific EffectElectron cyclotron resonance:

Implementation Method 3

the transmittance adjusting coating includes a first portion having a first transmittance for the microwave and a second portion having a second transmittance for the microwave

Methodology Applied
Scientific EffectElectromagnetic radiation absorption: Absorption (EM radiation)

Data Source

PatentUS11996270B2Wafer processing apparatus
Publication Date: 2024.05.28 SAMSUNG ELECTRONICS CO LTD
  • US11996270B2 patent drawing
  • US11996270B2 patent drawing
  • US11996270B2 patent drawing

AI summary

A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.