Microwave Window Refraction for Uniform High-Speed Wafer Processing
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Solution Overview
Problem
Previous wafer processing apparatuses based on electron cyclotron resonance (ECR) face a trade-off between process speed and uniformity, where increasing process speed often compromises uniformity, leading to non-uniform plasma distribution and potential semiconductor device failures.
Innovation Solution
A wafer processing apparatus with a microwave window having a variable refractive index, which adjusts the beam cross-section and plasma generation position, combined with a magnetic field to enhance plasma uniformity and processing speed, and a transmittance adjusting coating to optimize plasma density distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If process speed is increased in ECR-based wafer processing, then productivity is improved, but plasma uniformity deteriorates
Solution Approach 1:
The microwave window is designed with a variable refractive index that changes according to the radial distance from the optical axis. The center region has a different refractive index than the edge region, allowing different parts of the microwave beam to be focused at different positions. This creates a more uniform plasma distribution across the wafer surface even at high process speeds, resolving the contradiction between productivity and plasma uniformity.
2Device complexity
If microwave beam cross-section is not controlled, then device complexity is reduced, but plasma distribution uniformity deteriorates
Solution Approach 1:
Instead of using complex mechanical focusing systems or adjustable components, the patent changes the optical parameter (refractive index) of the microwave window material itself. By selecting a material with a variable refractive index that varies radially from the optical axis, the system achieves beam cross-section control and plasma uniformity without adding mechanical complexity. The refractive index gradient naturally focuses the microwave beam to create a uniform plasma distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves the uniformity and reliability of wafer processing, allowing for high-speed processing while maintaining uniformity, thereby enhancing semiconductor device manufacturing productivity and reliability.
Implementation Method 1
a refractive index of the microwave window varies according to a distance from an optical axis of the microwave window
Implementation Method 2
a process region in which electron cyclotron resonance (ECR) plasma is generated
Implementation Method 3
the transmittance adjusting coating includes a first portion having a first transmittance for the microwave and a second portion having a second transmittance for the microwave
Data Source
AI summary
A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.


