Atomic Layer Etching with Electron-Controlled Treatment Layer Desorption
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Solution Overview
Problem
In atomic layer etching, precise control of ion energy is challenging due to its distribution following Maxwell-Boltzmann distribution, leading to difficulties in minimizing structural deformation and electrical characteristic changes in the material being etched.
Innovation Solution
The method involves using electrons instead of ions for desorption, with adjustable voltage applied to grids and substrates to control the incidence of electrons and ions into the treatment layer, allowing for precise adjustment of isotropic or anisotropic desorption, thereby minimizing structural deformation and electrical changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If ions are used for desorption in atomic layer etching, then etching capability is improved, but structural deformation and electrical characteristic changes increase
Solution Approach 1:
The patent introduces an intermediary substance (organic compound layer) between the substrate and the etching process. This layer acts as a mediator that can be selectively removed, enabling etching without direct ion bombardment of the substrate, thereby reducing structural deformation and electrical characteristic changes while maintaining etching capability
Solution Approach 2:
The patent replaces the mechanical/physical ion bombardment system with a chemical reaction system. Instead of using ion energy to physically sputter atoms from the substrate, the process uses chemical reactions between adsorbed radicals and the substrate material, followed by selective desorption, thus eliminating the harmful mechanical impact of ions on substrate structure
2Productivity
If ion energy is increased to improve etching rate, then productivity increases, but control precision decreases due to Maxwell-Boltzmann distribution
Solution Approach 1:
The patent changes the fundamental parameter of the etching process from ion energy (which follows Maxwell-Boltzmann distribution) to chemical reaction parameters such as adsorption temperature, gas pressure, and radical concentration. These parameters can be precisely controlled and do not exhibit the same statistical distribution, enabling better control precision while maintaining high etching rates through optimized chemical reaction conditions
3Manufacturing precision
If chemical methods are used for atomic layer etching, then manufacturing precision is improved, but harmful factors increase due to chemical reactions
Solution Approach 1:
The patent employs an inert atmosphere approach by using fluorocarbon-based gases in a controlled environment. The process generates a protective carbon-containing layer that prevents unwanted chemical reactions with the substrate, and the byproducts can be effectively pumped away, maintaining high precision while minimizing harmful chemical effects
Solution Approach 2:
The patent implements a cycle of forming and removing the treatment layer, where the treatment layer (formed by chemical reaction) is deliberately created and then completely removed in the next step. This discarding approach ensures that no harmful chemical residues remain on the substrate after etching, maintaining precision while eliminating harmful byproducts through systematic removal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise and minimally deforming etching of atomic layers, maintaining structural integrity and electrical characteristics by controlling the etching process through electron and ion incidence.
Implementation Method 1
adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer
Implementation Method 2
generating etching gas plasma in the first chamber part; and allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer
Implementation Method 3
allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer
Implementation Method 4
allowing ions of the etching gas plasma to being incident into the treatment layer, into which the elections are incident, to charge-neutralize the treatment layer
Data Source
AI summary
Provided is a method for etching an atomic layer. The method for etching the atomic layer includes providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part, generating adsorption gas plasma in the first chamber part, adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer, generating etching gas plasma in the first chamber part, and allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer.