ALD Chamber Lid with Remote Plasma and Thermal Control
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Solution Overview
Problem
Atomic layer deposition (ALD) processes face challenges in reliably filling submicron features with high aspect ratios due to issues like 'M' shaped thickness profiles and byproduct buildup in chamber components, leading to non-uniform deposition and voids in high aspect ratio structures.
Innovation Solution
A cleaning method and apparatus for ALD chambers using a remote plasma source and a multi-injection lid assembly with heating elements and an isolation collar to vaporize byproducts and improve gas flow uniformity, ensuring a turbulent gas mixing pattern for enhanced deposition uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional deposition processes are used for submicron structures, then the process is simpler and faster, but the aspect ratio exceeds 4:1 and particularly 10:1 causing difficulty in filling high aspect ratio features
Solution Approach 1:
The patent employs atomic layer deposition (ALD) which changes the deposition parameters to achieve conformal coating on high aspect ratio features. The sequential introduction of reactant gases and purge gases, along with precise temperature control of the substrate and chamber components, enables uniform deposition even on features with aspect ratios exceeding 10:1
Solution Approach 2:
The ALD process uses periodic cyclic deposition where reactant and purge gases are introduced in sequential pulses. This periodic action allows for self-limiting surface reactions that ensure uniform material deposition on complex geometries including high aspect ratio features, overcoming the limitations of continuous deposition methods
2Manufacturing precision
If sequential introduction of reactant gases is used, then monolayer deposition is achieved, but byproducts build up on chamber components and flake off onto the substrate
Solution Approach 1:
The patent incorporates a plasma cleaning step before the ALD deposition process. This preliminary action removes organic contaminants and byproducts from chamber components surfaces, preventing their accumulation during subsequent deposition cycles and eliminating the source of flaking particles that would contaminate the substrate
Solution Approach 2:
The system maintains continuous plasma generation or periodic plasma pulses during the deposition process to continuously remove byproducts from chamber surfaces. This continuous cleaning action prevents byproduct buildup and flaking throughout the deposition process, ensuring consistent monolayer formation without contamination
3Reliability
If purge gas is introduced between reactant pulses, then gas phase reactions are reduced, but deposition uniformity is affected by non-uniform gas flow patterns
Solution Approach 1:
The patent replaces simple mechanical gas flow with plasma-enhanced gas delivery. The plasma creates reactive species that improve gas phase mixing and reaction control, allowing for more uniform deposition while maintaining the benefit of reduced unwanted gas phase reactions through better control of reactant activation and distribution
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively cleans ALD chambers, reducing byproduct accumulation and achieving uniform deposition across substrates, thereby improving the reliability of filling high aspect ratio features without voids and seams.
Implementation Method 1
a first heating element to heat the central channel
Implementation Method 2
a second heating element to heat the bottom surface of the lid plate
Implementation Method 3
a remote plasma source fluidly coupled to the central channel
Data Source
AI summary
Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.


