Electric Discharge Tubes TRIZ Cases

A plasma treatment method generates CN active species from mixed gas to treat semiconductor substrate surfaces.

Stepped electrode gap eliminates dielectric barriers and through holes to resolve uneven plasma distribution and photoresist adhesion failures.

A plasma processor cooling member uses annular seal members to define a controlled gas space for thermal management.

A solid-state relay plasma initiator replaces mechanical triggers to enable precise control over macroparticle size and deposition rate.

A charged-particle beam writing apparatus corrects irradiation positions using calculated thermal deformation data.

A charged particle beam device uses a virtual optical axis to integrate a camera without enlarging the housing.

Backside coatings relieve stress from film stacks to flatten substrates, preventing handling damage and overlay errors in high-density memory fabrication.

Aggressive plasma preconditioning increases nitrogen incorporation density in oxide films for consistent gate dielectric characteristics.

Conditioning ceramic coatings via wetting, particle blasting, and rinsing reduces electrostatic charging to prevent plasma chamber arcing.

A plasma etching cover member shields the substrate outer edge from direct plasma exposure during processing.

A control unit monitors voltage and current waveforms at the plasma chamber input to detect parameter anomalies.

Adjusting the RF source applicator tilt angle aligns plasma non-uniformity functions between two reactors.

A segmented electrostatic chuck uses independent electrodes to attract wafers and focus rings via distinct ceramic resistivity profiles.

Segmented aluminum windows resolve dielectric brittleness, allowing larger substrate handling and uniform gas distribution.

Convert vector lithography patterns into spatially mapped bitmaps via preliminary quantization, resolving non-deterministic memory requirements.

A detachable shaft couples to a cooling bottom plate via bolts, separating the ceramic top plate assembly from mechanical support structures.

Ion implantation at elevated temperatures preserves stoichiometric integrity in III-Nitride semiconductor bodies.

Circumferential heater segments control temperature uniformity on large wafers, preventing electrostatic damage from RF power leakage.

Merging magnetic and electrostatic lenses maintains optical performance at low landing energies, reducing aberrations during wafer inspection.

Replaceable nozzle adaptors redirect gas flow to minimize film buildup, enabling effective dry cleaning in narrow semiconductor processing spaces.

Atmospheric pressure presses flexible slit valve doors against chamber surfaces, maintaining vacuum integrity without breaking transfer chamber seals.

A frame attached to a mesh suppresses deformation to contain powder-state getter material, preventing dispersion while maintaining high pumping speed.

Segmented conductive interfaces generate sequential zapping pulses to form grounding holes, minimizing cumulative wafer damage during electrical breakdown.

Enclosed sinusoidal trajectories replace raster scans, resolving the contradiction between high throughput and complex pattern versatility in nanolithography.

Obliquely slanted magnetic fields suppress electron localization at the center, preventing plasma density singularities and etching rate non-uniformity.

Dual aperture substrates shape charged particle beams to adjust dimensions, overcoming limited beam size flexibility in multi-beam writing.

Segmenting the plasma tube with a partial PBN liner reduces boron impurity incorporation while maintaining active species consistency.

Segmented coil sets with opposite polarity cancel hexapole field distortion while maintaining strong deflecting force.

Rotational symmetric semicircle antenna segments form a uniform electric field to resolve layer thickness non-uniformity on non-planar substrates.

A two-step plasma etching process with gas inlet switching extends mean time between cleans.

Periodic charge removal based on sample count or time suppresses static buildup while maintaining high-throughput scanning electron microscope measurements.

A hot filament generates thermionic electrons to boost plasma ionization density within magnetron sputtering reactors.

Segmented pumping chambers and gas supply systems resolve pressure stability trade-offs, enabling scanning electron microscopy in open areas.

A hermetic liner layer protects semiconductor fins using plasma treatment.

Fluorine and hydrogen precursors form a plasma that selectively removes silicon layers.

A charged particle beam apparatus adjusts primary electron incident angles using image shift deflectors and control parameters.

A substrate processing apparatus alternates process gas flowrates to generate plasma and deliver active species.

Merging separate precursor gases into one stream reduces cycle time while maintaining high HF resistance.

Adjustable leaf springs secure lamp pinch feet through elastic deformation, accommodating manufacturing tolerances to prevent base damage.

A pulse electromagnet generates a magnetic field for magnetron sputtering inside metal tubes, enabling uniform coating on small diameter surfaces.

Segmented microstructure prevents local incipient melting while ensuring uniform sputtering behavior.

Segmented electrostatic shield reduces capacitive coupling to minimize localized sputter damage on the dielectric window.

Central anode segmentation resolves inhomogeneous layer structures on three-dimensional substrates by generating isotropic plasma distribution.

A segmented magnetron electrode generates high-density plasma using independent magnetic circuits to stabilize discharge across both cathode sides.

Heated electrodes maintain stable atmospheric argon plasma, resolving instability from high ionization rates to enable low-temperature substrate processing.

A contoured lid plate with heating elements vaporizes byproducts via remote plasma, ensuring uniform gas flow for high aspect ratio features.

A cluster protection layer shields relief structure corners from deformation during gas cluster ion beam irradiation, preserving nanoscale contour precision.

Dynamic adjustment of pulse wave low levels during transition periods reduces plasma load fluctuations and maintains stable impedance matching.