Gas Injector Nozzle Adaptor for Film Buildup Reduction
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Solution Overview
Problem
Current semiconductor processing methods face challenges with film buildup in reaction chambers, leading to contamination, equipment downtime, and increased maintenance costs due to inefficient cleaning of gas injector nozzle heads, especially in narrow spaces.
Innovation Solution
The introduction of adaptable nozzle designs with various geometric configurations for gas injectors in semiconductor processing reaction chambers, which redirect gas flow to minimize film buildup formation and facilitate effective in-situ dry cleaning, reducing downtime and maintenance needs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If in-situ plasma cleaning is used to remove film buildups, then cleaning speed is improved and tool downtime is minimized, but cleaning efficiency in narrow spaces such as gas injector tubes is insufficient
Solution Approach 1:
The gas injector nozzle head is divided into a replaceable adaptor component and a permanent body. The adaptor can be easily removed and replaced, allowing the narrow internal passages to be accessed and cleaned effectively without disassembling the entire nozzle assembly.
Solution Approach 2:
A remote plasma source is introduced as an intermediary cleaning mechanism. The remote plasma source generates reactive species that are transported through the gas injector to clean the internal surfaces, providing better access to narrow spaces compared to direct plasma exposure.
2Productivity
If repeated plasma cleaning processes are applied, then film buildups are removed, but excessive over-etching occurs changing the nozzle opening size and affecting injection pressure
Solution Approach 1:
The adaptor is designed as a disposable or easily replaceable component. Instead of repeatedly cleaning the entire nozzle head and risking over-etching, the adaptor can be replaced when worn, ensuring consistent nozzle opening dimensions and injection pressure characteristics.
Solution Approach 2:
The cleaning process parameters are optimized by using remote plasma with controlled reactive species flux. This allows effective film removal while reducing ion bombardment energy, thereby minimizing etching of the nozzle metal and maintaining dimensional stability.
3Reliability
If frequent replacement of gas injector nozzle heads is performed, then processing characteristics are maintained, but maintenance costs increase affecting process economics
Solution Approach 1:
The nozzle assembly is segmented into a permanent body and a replaceable adaptor. Only the adaptor needs to be replaced periodically, not the entire nozzle head, reducing maintenance costs while maintaining processing quality.
Solution Approach 2:
The adaptor design allows for universal application across different gas injector configurations. A single adaptor design can fit multiple nozzle bodies, reducing the variety of spare parts needed and lowering inventory and maintenance costs.
4Device complexity
If traditional straight gas flow paths are used, then gas delivery is simple, but film buildup forms easily on inner surfaces of the gas injector
Solution Approach 1:
The adaptor incorporates curved or angled flow paths instead of straight channels. This curvature disrupts the deposition process by preventing films from adhering strongly to surfaces and facilitates plasma access for cleaning the inner surfaces.
Solution Approach 2:
Different sections of the adaptor have different surface properties or geometries optimized for specific functions. Critical areas prone to film buildup have enhanced plasma exposure or modified surface characteristics to reduce deposition while maintaining gas flow efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The adaptable nozzle designs enhance cleaning efficiency, reduce contamination, and minimize damage to equipment, thereby improving production yield and reducing maintenance costs by effectively preventing film buildup and maintaining processing characteristics.
Implementation Method 1
at least one adaptor comprising a plurality of flow regulation components to alter a flow direction of the gas at the downstream end
Implementation Method 2
the film buildups can be also removed from the inner surfaces of reaction chambers by a dry cleaning method using plasma-assisted etching
Implementation Method 3
layers of material are created by chemical vapor deposition (CVD)
Data Source
AI summary
Disclosed is a gas injector for a semiconductor processing system comprising a tube, and at least one nozzle head mounted on a downstream end of the tube wherein the at least one nozzle allows a fluid communication to discharge a gas from a upstream end of the tube through the at least one nozzle of the gas injector to ambient atmosphere surrounding the downstream end of the tube, wherein the at least one nozzle comprises: a body, and at least one adaptor comprising a plurality of flow regulation components to alter a flow direction of the gas at the downstream end, wherein the plurality of flow regulation components are each constructed and arranged such that a film buildup on inner surfaces of the gas injector is reduced.


