Plasma Processor Cooling Member Pressure Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional plasma processors face challenges in efficiently regulating the temperature of the inner surface of the processing chamber due to conflicting heating and cooling operations, and the high cost of using high-boiling-point cooling fluids, which affects the stability and accuracy of etching processes.
Innovation Solution
A plasma processor that utilizes a metallic cooling member with a cooling passage and an annular seal member to control pressure in the annulus, allowing for efficient heating and cooling by adjusting the pressure to facilitate heat transfer or insulation, enabling rapid temperature regulation and using water as a low-cost cooling fluid.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heater is provided to heat the processing chamber in advance, then the temperature of the inner surface can be raised to a predetermined temperature beforehand, but the heating operation conflicts with the cooling operation, making it impossible to efficiently raise the temperature
Solution Approach 1:
The patent applies dynamics by making the cooling gas supply controllable rather than constant. The cooling gas supply mechanism is controlled to supply cooling gas primarily during the plasma generation period, and to reduce or stop supply during the heating period. This dynamic adjustment of the cooling gas flow rate allows the system to efficiently raise the temperature during heating while maintaining temperature control during plasma processing, resolving the contradiction between heating efficiency and temperature stability.
2Temperature
If cooling gas is supplied into the space surrounded by the inner member, processing chamber and seal members, then the temperature of the inner member is maintained within a certain range, but a certain time is required before the inner surface reaches a predetermined temperature, causing the etching process to be unstable initially
Solution Approach 1:
The patent applies dynamics by making the cooling gas supply controllable rather than constant. The cooling gas supply mechanism is controlled to supply cooling gas primarily during the plasma generation period, and to reduce or stop supply during the heating period. This dynamic adjustment of the cooling gas flow rate allows the system to efficiently raise the temperature during heating while maintaining temperature control during plasma processing, resolving the contradiction between heating efficiency and temperature stability.
Solution Approach 2:
The patent applies preliminary action by heating the processing chamber in advance using the heater before the etching process begins. The control mechanism is designed to activate the heater during a pre-heating phase, raising the inner surface temperature to the predetermined range before plasma generation starts. This preliminary heating action ensures that the etching process begins with stable temperature conditions, eliminating the initial instability period.
3Productivity
If high-frequency power is applied to generate plasma, then the etching process can be performed, but the plasma heat causes the inner surface temperature to rise, requiring continuous cooling that increases operational complexity
Solution Approach 1:
The patent applies dynamics by making the cooling gas supply controllable rather than constant. The cooling gas supply mechanism is controlled to supply cooling gas primarily during the plasma generation period, and to reduce or stop supply during the heating period. This dynamic adjustment of the cooling gas flow rate allows the system to efficiently raise the temperature during heating while maintaining temperature control during plasma processing, resolving the contradiction between heating efficiency and temperature stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for precise and rapid temperature control of the processing chamber, maintaining the inner surface temperature within a desired range during etching processes, improving process stability and reducing costs by using water as the cooling fluid.
Implementation Method 1
the cooling gas supply mechanism supplies cooling gas into the space surrounded by the inner member, the processing chamber and the seal members, and the inner member is cooled by the supplied cooling gas
Implementation Method 2
a heater for heating the processing chamber (inner member) is provided in the plasma processor and the processing chamber (inner member) is heated by the heater in advance
Implementation Method 3
a plasma generating mechanism for, by the high-frequency power being applied by the high-frequency power supply unit, forming a plasma from the processing gas supplied into the processing chamber
Implementation Method 4
the temperature of the inner member is prevented from rising due to the heat of the generated plasma
Data Source
AI summary
The present invention relates to a plasma processor capable of regulating the temperature of the inner surface of the processing chamber efficiently and with excellent response, with a low-cost configuration. A plasma processor 1 includes a processing chamber 11, a processing gas supply device 20, an exhaust device 40, coils 23, a high-frequency power supply unit 24, a heater 26, a cooling device 30, and a control device 50. The cooling device 30 is configured with a cooling member 32 facing the processing chamber 11 at a distance therefrom, a cooling fluid supply section 31 for supplying cooling fluid into a cooling passage 32a of the cooling member 32 and circulates it, and annular seal members 35 and 36 provided between the cooling member 32 and the processing chamber 11. The exhaust device 40 reduces the pressure in a space S surrounded by the seal members 35 and 36, the cooling member 32, and the processing chamber 11. The control device 50 controls the exhaust device 40 to reduce the pressure in the space S when high-frequency power is not applied to the coils 23, and to set the pressure in the space S at atmospheric pressure when high-frequency power is applied to the coils 23.