High-Temperature Ion Implantation for III-Nitride Doping
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Solution Overview
Problem
Doping III-Nitride semiconductor bodies at high temperatures poses a challenge due to nitrogen decomposition, limiting spatially confined lateral doping and requiring complex etch and redeposition methods, while conventional growth techniques result in homogeneous doping.
Innovation Solution
Ion implantation at high temperature surface equilibrium conditions within a chamber maintaining gas pressure above the surface equilibrium pressure, allowing nitrogen retention and enabling in-situ dopant activation without decomposing the semiconductor body.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If ion implantation is performed at high temperature to activate dopants in-situ, then productivity is improved by eliminating post-implant annealing, but nitrogen decomposition occurs causing loss of substance
Solution Approach 1:
The patent applies this principle by introducing a nitrogen-containing atmosphere (ammonia gas or nitrogen plasma) during ion implantation at high temperature. This inert environment prevents nitrogen decomposition and loss from the III-nitride semiconductor body, enabling in-situ dopant activation without the harmful effects of nitrogen escape that would otherwise occur at elevated temperatures.
Solution Approach 2:
The patent applies this principle by changing the chemical environment parameters (introducing ammonia or nitrogen plasma) while maintaining high temperature conditions. This parameter change allows the system to operate at temperatures sufficient for dopant activation while simultaneously preventing nitrogen decomposition through the protective nitrogen-containing atmosphere.
2Stability of the object's composition
If conventional growth techniques are used to dope III-Nitride, then stoichiometric integrity is preserved, but manufacturing precision is reduced due to homogeneous doping without lateral confinement
Solution Approach 1:
The patent applies this principle by merging ion implantation (which provides spatial precision) with high-temperature processing in a nitrogen-containing atmosphere (which preserves stoichiometric integrity). This combination allows simultaneous achievement of both localized dopant placement and maintenance of nitrogen content in the III-nitride structure.
Solution Approach 2:
The patent applies this principle by performing dopant implantation at high temperature within a nitrogen-containing atmosphere before any potential nitrogen loss can occur. The preliminary establishment of the nitrogen-rich environment prevents decomposition during the doping process, enabling precise spatial control without compromising compositional stability.
3Ease of manufacture
If high temperature processing is applied to activate dopants, then ease of manufacture is improved by eliminating separate annealing steps, but nitrogen escape increases causing decomposition
Solution Approach 1:
The patent applies this principle by creating a nitrogen-rich inert atmosphere using ammonia gas or nitrogen plasma during high-temperature ion implantation. This environment suppresses nitrogen escape and decomposition, allowing the process to be performed at temperatures high enough for effective dopant activation without generating the harmful nitrogen loss that would otherwise require separate annealing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for spatially confined doping and eliminates the need for post-implant annealing, preserving stoichiometric integrity and enabling precise control over dopant distribution in III-Nitride semiconductor bodies.
Implementation Method 1
establishing a gas pressure greater than or equal to a surface equilibrium pressure sufficient to prevent said escape of nitrogen from said III-Nitride semiconductor body
Implementation Method 2
implanting said III-Nitride semiconductor body in said surface equilibrium chamber at said elevated implantation temperature while substantially maintaining said gas pressure
Data Source
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AI summary
There are disclosed herein various implementations of a method and system for ion implantation at high temperature surface equilibrium conditions. The method may include situating a III-Nitride semiconductor body in a surface equilibrium chamber, establishing a gas pressure greater than or approximately equal to a surface equilibrium pressure of the III-Nitride semiconductor body, and heating the III-Nitride semiconductor body to an elevated implantation temperature in the surface equilibrium chamber while substantially maintaining the gas pressure. The method also includes implanting the III-Nitride semiconductor body in the surface equilibrium at the elevated implantation temperature chamber while substantially maintaining the gas pressure, the implanting being performed using an ion implanter interfacing with the surface equilibrium chamber.