Segmented Magnetron Electrode for Balanced Plasma CVD
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Solution Overview
Problem
Existing plasma electrodes for sputtering film deposition lack efficient plasma sources for plasma processing and plasma CVD, often resulting in unstable and unbalanced plasma generation across both sides of the cathode, leading to poor controllability and inefficiencies in film deposition.
Innovation Solution
A plasma CVD device with a magnetron electrode design featuring a magnet, yoke, and cathode configuration that generates a continuous magnetic field around the electrode, using a ground member to stabilize plasma generation and ensure balanced plasma intensity on both sides, along with refrigerant cooling and strategically placed gas nozzles for efficient plasma processing and film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If sputtering electrodes with magnetic circuits are used for plasma processing or plasma CVD, then film deposition can be performed on both sides of cathode, but plasma generation becomes unstable and unbalanced between both sides
Solution Approach 1:
The electrode is divided into two independent plasma generation units, each with its own magnetic circuit (first and second magnetic circuits) that can be controlled separately. This segmentation allows independent optimization of plasma generation on each side of the cathode, ensuring stable and balanced plasma while maintaining high productivity for film deposition on both sides.
Solution Approach 2:
Different magnetic circuit configurations are applied to different sides of the cathode based on local requirements. The first magnetic circuit is optimized for plasma generation on the first side, while the second magnetic circuit is optimized for the second side, allowing each region to have the appropriate magnetic field characteristics for stable plasma generation and efficient film deposition.
2Device complexity
If conventional electrode structures are used, then simple construction is achieved, but plasma intensity is unbalanced between both sides of cathode
Solution Approach 1:
The electrode structure is segmented into two independent plasma generation units with separate magnetic circuits, allowing each side to be independently controlled and optimized. This maintains relative structural simplicity while achieving balanced plasma intensity through independent adjustment of each magnetic circuit.
3Reliability
If single-sided plasma generation is used, then stable plasma is achieved, but productivity is reduced due to inability to perform film deposition on both sides simultaneously
Solution Approach 1:
The electrode is divided into two independent plasma generation units that can operate simultaneously and independently. Each unit maintains stable plasma generation through its dedicated magnetic circuit, while both units work in parallel to deposit films on both sides of the cathode at the same time, effectively doubling productivity.
Solution Approach 2:
Both sides of the cathode undergo film deposition simultaneously through continuous plasma generation on both sides. The dual magnetic circuit configuration ensures continuous and stable plasma generation on each side, eliminating idle time and maximizing productivity through parallel processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a stable, high-density plasma source that enhances productivity and controllability in plasma processing and CVD film deposition, improving installation space efficiency and deposition speed compared to conventional technologies.
Implementation Method 1
A plasma CVD device with a magnetron electrode design featuring a magnet, yoke, and cathode configuration that generates a continuous magnetic field around the electrode
Implementation Method 2
a first gas supply nozzle for supplying gas so as to pass through the plasma-forming space between the anode and cathode
Implementation Method 3
along with refrigerant cooling and strategically placed gas nozzles for efficient plasma processing and film deposition
Implementation Method 4
Plasma CVD device and method for manufacturing a substrate with a thin film
Data Source
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AI summary
The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and ground members which face at least a portion of the discharge surface with a gap therebetween and face each other so as to sandwich the electrode main body therebetween. The discharge surface surrounds the outer circumference of the electrode main body, either with or without a gap interposed therebetween. According to the invention, a plasma electrode capable of achieving both improved plasma processing speed and stable discharge is provided.